| Allicdata Part #: | KSD1417TU-ND |
| Manufacturer Part#: |
KSD1417TU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN DARL 60V 7A TO-220F |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 60V 7A ... |
| DataSheet: |  KSD1417TU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 7A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 2V @ 14mA, 7A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 3A, 3V |
| Power - Max: | 2W |
| Frequency - Transition: | -- |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
Description
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KSD1417TU, or NPN-Purdue, is a type of single bipolar junction transistor (BJT) designed for high speed switching and receiver applications. The device has a maximum current capacity of 1.5A and a breakdown voltage of 60V. It also has a low temperature coefficient, high-frequency operation, and low power consumption.KSD1417TU has a unique design where the collector and emitter regions are physically adjacent, allowing for better control over the current gain and faster switching. The device features a collector-base voltage range of up to 60V and a collector-emitter voltage up to 36V. This allows for use in wide range of high-speed applications.The design of the KSD1417TU is similar to other single bipolar junction transistors, but the dense physical arrangement of the collector and emitter offer enhanced performance characteristics. In addition to the physical layout, the KSD1417TU also features a high current gain and low saturation voltage. The device is usually used for switching and receiver applications due to its high switching speed, low power consumption, and high current capacity.The working principle of the KSD1417TU is based on the same principles as other single bipolar junction transistors. When a voltage is applied to the base-emitter junction, electrons are injected into the base region. These electrons then create a conductive path between the collector and emitter regions. The device is then in the “on” state and current can flow through it.The current gain of the KSD1417TU is expressed as the hfe-dc ratio, also known as the current transfer ratio. The ratio is the ratio between the collector current and the base current. KSD1417TU has a hfe-dc ratio of anywhere from 50-250, which is significantly higher than other single bipolar junction transistors.The KSD1417TU is usually used for a variety of high-speed switching purposes, including high frequency switching, current sensor applications, and audio amplifier applications. The device features a low on-resistance, or RDSon, allowing for reduced power consumption and increased efficiency. Additionally, the device offers high immunity from noise, as well as high temperature performance.In conclusion, the KSD1417TU is a single bipolar junction transistor designed for high-speed switching and receiver applications. The device features a high current gain and low saturation voltage, as well as low power consumption and high speed switching. The device can be used in a variety of applications, including high frequency switching, current sensor applications, and audio amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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