KSD1616LBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100mA, 2V
Power - Max:	750mW
Frequency - Transition:	160MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	KSD1616

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Introduction: The KSD1616LBU is a Single Bipolar Junction Transistor (BJT) designed for industrial and commercial applications operating at temperatures ranging from ambient temperature to 85℃. It has a maximum power dissipation of 80W and an operating voltage range from 10V to 30V. The bipolar transistor was designed to switch electrical signals, amplify power signals and propagate logic signals.Construction: The collector-emitter channel of the BJT is made of N-type semiconductor material connected to the base. The emitter node is connected to the N-type material and the collector node is connected to the P-type material. The current applied to the base is proportional to the current that passes through the collector-emitter channel. Therefore, the BJT has three terminals, namely the collector, the base, and the emitter.Working Principle: The KSD1616 MOSFET has a traditional current-controlled operation mode. When a positive voltage is applied to the base of the transistor, it forms a current path from the collector to the emitter. This current then allows electrons to flow between the two terminals. If a negative voltage is applied to the base of the MOSFET, the current flows from the emitter to the collector and no current is passed from the collector to the emitter. The working principle of the KSD1616LBU is based on the basic operation of a two-terminal device, whereby minority carriers are injected into the collector-base junction and then accelerated by the electric field created by the applied voltage. This electrons then cross the collector-base junction, recombine with the holes in the base region, and contribute to the overall current gain of the device.KSD1616LBU Application Field: The KSD1616LBU transistor is ideal for switched form factor applications such as power transistors and power LEDs. It is also suitable for various switching and amplification applications such as regulated power supplies, class AB/B amplifier stages, voltage limiting/ protection and polarity inverting/reversing. This device is also used in applications such as gate drive circuits, motor control applications and low power linear amplifiers.Conclusion: The KSD1616LBU is a reliable and high performance single bipolar junction transistor designed for industrial and commercial applications. It offers the highest current gain of the conventional BJTs and can be used for various switching and amplification applications. The KSD1616LBU is a reliable and robust switch which is suitable for many applications in industrial and commercial settings.

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