![KSD1021YTA Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | KSD1021YTA-ND |
Manufacturer Part#: |
KSD1021YTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 1A TO-92S |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1A 130MHz 350mW T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 1V |
Power - Max: | 350mW |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Base Part Number: | KSD1021 |
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The KSD1021YTA is a device from Toshiba\'s Single Transistor family. It is a single transistor with a metal oxide-nitride-silicon gate and is suitable for use in many applications. It has a maximum collector current rating of 300mA, and a maximum voltage rating of 80V. It also has a maximum operating temperature of 150°C, making it suitable for high-temperature applications.
The most common application field for the KSD1021YTA is as a switch in power supply circuits, such as in digital power supplies, inverters, and general purpose switching circuits. It can also be used as a current limiter and voltage regulator, or as a driver transistor for switching applications.
The KSD1021YTA utilizes bipolar junction transistor (BJT) technology. A BJT is a type of transistor that utilizes three diodes connected in series between a collector and emitter. When a small current passes through the base of the transistor, it will allow a larger current to flow through the collector, thus allowing the transistor to act as an amplifier or switch. The KSD1021YTA is an NPN transistor, which means that when an additional voltage is applied to the base, the current that passes through the collector increases.
The KSD1021YTA also utilizes the company\'s unique CMOX (Carbon Modulated Oxide) technology. CMOX is a feature of Toshiba\'s process technology that combines several layers of carbon-doped oxides for the formation of the gate. This combination results in a fast switching time, high current handling capacity, and low leakage current. This makes it suitable for high-frequency switching applications.
The working principle of the KSD1021YTA is based on the following parameters: current gain, Input impedance, current capacity, and Thermal resistance. When an external voltage is applied to the base of the device, it creates a potential difference across the collector and the emitter, thus enabling a current to flow through the collector. The current gain, which is the ratio between the collector current and the base current, is determined by the current capacity of the device. The input impedance of the device determines the amount of voltage required to switch the current in the collector. Finally, the thermal resistance of the device is used to determine its maximum operating temperature.
The KSD1021YTA is a very versatile device, and is suitable for use in a wide range of applications. It is capable of switching high currents and voltages, making it suitable for various power supply applications. It also has a fast switching time and low leakage current, which makes it well suited for high-frequency switching applications. Finally, its high temperature performance makes it suitable for use in high-temperature applications.
The specific data is subject to PDF, and the above content is for reference
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