KSD1616ALTA

KSD1616ALTA application field and working principle

The KSD1616ALTA is a single bipolar junction transistor (BJT) device which provides superior reliability and good power-handling performance. It is typically used for general-purpose, analog, digital and audio applications. This device has two configurations, the Common Emitter (CE) and Common Collector (CC) configurations.

Characteristics

The KSD1616ALTA features superior electrical characteristics in comparison to other similar devices. It includes PNP General Purpose Transistors with NPN performance characteristics and has a Collector-to-Emitter Breakdown Voltage (BVceo) of 16.5 V minimum at 25°C and a maximum betwen 18 V and 24 V. Its low collector to emitter leakage current (Icbo) and minimal collector to emitter saturation voltage (Vce(sat)) further contribute to its superior performance.

Physical Characteristics

The KSD1616ALTA has a package size of 0.43 x 0.45 inches, a total of three terminals (E, C & B) for connection, and is specifically designed for high temperature applications and soldering. The device can be easily fixed on a printed circuit board with its standard lead-free soldering solder joint.

Application Fields

The KSD1616ALTA is suitable for various fields, including power supplies, amplifier circuits, voltage regulation, switching applications, and electrical protection devices. Its high current loading capability makes it suitable for potential applications that require an extremely high power handling capability. Its wide voltage range, savings in size, and reduced cost make implemention easy and economical.

Working Principle

The KSD1616ALTA is a three-terminal, NPN transistor with a single emitter, a single collector and a single base terminal. The varying potential applied to the emitter-base junction causes an emitter current to flow. The emitter current is dependent upon the applied current and the characteristics of the transistor. The collector current is directly proportional to the emitter current. The current gain of the transistor is known as the amplification factor, this factor is referred to as alpha in BJT\'s.

The KSD1616ALTA consists of a two layers of semiconductor material, one p type and the other n type. This structure forms two p-n junctions, known as the base-emitter junction and the base-collector junction. The collector current is controlled by the base current, which in turn is controlled by the voltage applied at the base terminal. When the base-emitter junction is forward biased and the base-collector junction is reverse biased, the current gain of the transistor is maximized.

The KSD1616ALTA also has a higher switching speed compared to other complementary BJTs, which makes it suitable for high-frequency power switching application. This high switching speed of the KSD1616ALTA ensures a smooth and reliable transition of current between the collector and emitter.

Conclusion

The KSD1616ALTA is a single bipolar junction transistor offering superior reliability, good power-handling performance, and small size. It is suitable for various application fields, ranging from power supplies to switching applications. Due to its high current loading capability and low price, it has a large application in many commercial and industrial products.