Allicdata Part #: | KSD1408YTU-ND |
Manufacturer Part#: |
KSD1408YTU |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 4A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Throu... |
DataSheet: | KSD1408YTU Datasheet/PDF |
Quantity: | 1087 |
1 +: | $ 0.64260 |
10 +: | $ 0.57204 |
100 +: | $ 0.44579 |
500 +: | $ 0.36826 |
1000 +: | $ 0.29073 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 300mA, 3A |
Current - Collector Cutoff (Max): | 30µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 5V |
Power - Max: | 25W |
Frequency - Transition: | 8MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
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KSD1408YTU is a general-purpose bipolar junction transistor (BJT) of the NPN type. It is a low power dual-gate transistor that was developed as an advanced version of the KTN1408YTU, providing excellent thermal and electrical characteristics. KSD1408YTU is commonly used in many applications and has a variety of features to meet customer requirements. In this article we will explain the KSD1408YTU application field and working principle.
The KSD1408YTU is an NPN type high-performance low-power transistor. It can handle up to 30 V of collector-emitter voltage, 350 mA of collector current, and up to 5 watts of total power dissipation. It has a low on-resistance, low gate threshold voltage, and can handle up to 30 V of collector-emitter voltage. This makes it highly suitable for use in amplifier, driver and switching circuits.
The KSD1408YTU is also able to be connected in many different ways to form multiple circuit configurations. The transistor can be connected as a standard NPN single transistor, as a Darlington Pair, or as a complementary pair. In addition, the transistor can be connected in a semiconductor bridge circuit which can be used to provide voltage and current control, as well as commutation of switching circuits.
The internal construction of the KSD1408YTU consists of a silicon substrate, an emitter region, a base region, and a collector region. The emitter region is doped with an impurity, while the base and collector regions are doped with an opposite impurity. This arrangement creates a depletion region between the base and collector, known as the "ring of fire". When a voltage is applied to the base-collector junction, electrons from the emitter region diffuse across the ring of fire into the collector region, creating a current.
The KSD1408YTU has a wide range of applications. It is commonly used in amplifier and driver circuits as well as in switching circuits. In amplifier and driver circuits, the transistor is used as an active device to increase the current gain of the circuit. In switching circuits, the transistor is used to switch high current or voltage loads, or to switch high-frequency signals.
The KSD1408YTU is a versatile and reliable transistor that is used in many applications. Its low power features, easy connection, and wide range of configurations, make it suitable for use in many different circuits. Its advanced features provide excellent electrical and thermal characteristics, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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