Allicdata Part #: | MCH3374-TL-WOSTR-ND |
Manufacturer Part#: |
MCH3374-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 3A MCPH3 |
More Detail: | P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount SC-70F... |
DataSheet: | MCH3374-TL-W Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.4V @ 1mA |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | SC-70FL/MCPH3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 405pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MCH3374-TL-W is a high-performance power MOSFET from Monolithic Power System (MPS). It is a single, Darlington-connected N-channel metal-oxide-semiconductor field-effect transistor (MOSFET), designed primarily for power management applications. It features a low on-state resistance (RDS(on)) and a high voltage rating over a wide temperature range. This device is to be used both as a switch and as an amplifier.The MCH3374-TL-W is optimized for high frequency switching and low gate-charge requirements. It has a low drain-source on-resistance (RDS (on)) and can sustain a high drain-source voltage (VDS). The on-state resistance is kept low due to the optimization of the device’s structural design. It offers a low input-capacitance (CISS), which helps reduce the driving losses as well as increase the switching speed of the device. This device also has a high-speed switching capability and can operate up to a frequency of 100kHz.The MCH3374-TL-W has a two transistor structure with two source-drain terminals (D1, D2) connected to a single gate terminal (G). When a gate voltage is applied to the gate of the transistor, it creates an inversion layer in the gate-channel region. This inversion layer is a depletion type layer and its width can be varied by controlling the gate voltage. As the gate voltage is increased, the channel width increases, thus reducing the channel resistance and resulting in an increased current flow between the source and drain terminals.The drain-source breakdown voltage of the MCH3374-TL-W (VDSS) is rated up to 100V, making it well suited for applications having a maximum input voltage of 100V or less. The maximum drain current (ID) is rated up to 9A, making it ideal for applications requiring high current levels. The gate-source threshold voltage (VGS(th)) is rated up to 4V, which makes the device suitable for use in a wide range of applications.The MCH3374-TL-W is available in a variety of packages, including PDIP, SOIC, TSSOP, TO-220 and TO-252. It also offers excellent thermal management capabilities, with a thermal impedance of 0.7 °C/W per device.The MCH3374-TL-W is suitable for use in automotive, industrial, home appliances and other power management applications, where the low on-state resistance and high voltage rating over a wide temperature range are essential. The device can also be used in high-frequency applications such as Class-D audio amplifiers, motor drives and power supplies.In summary, the MCH3374-TL-W is a high-performance power MOSFET that is designed primarily for power management applications. It features a low on-state resistance, a high voltage rating over a wide temperature range and excellent thermal management capabilities. The device is optimized for high frequency switching and low gate-charge requirements, making it well suited for automotive, industrial, home appliances and other similar applications.
The specific data is subject to PDF, and the above content is for reference
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