MCH3376-TL-W

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The MCH3376-TL-W is a high-efficiency N-channel enhancement-mode power MOSFET with the new revolutionary ULTRA-Low On-Resistance technology designed for high performance and low power applications. This device has excellent thermal stability allowing higher output power and lower on-resistance. It is suitable for DC-DC conversion, inverters and other power applications.

The MCH3376-TL-W is built using an advanced planar technology to provide excellent switching performance and long drain-source breakdown capability. This device is rated at 15W, 200V, and offers superior thermal stability and high-performance switching characteristics. It has a low RDS(on) of 7 mOhm and fast switching speed of 4 ns.

The MCH3376-TL-W also features an avalanche absorption voltage of 400V, an ultra-low power consumption of only 0.5µA, and a maximum operating temperature of 150°C. The device is available in the standard TO-220AB package, making it ideal for space-constrained designs. This device is RoHS compliant and has been tested to withstand high surge currents.

The MCH3376-TL-W is used for low-voltage switching applications such as DC-DC converter circuits, boost and buck converters, inverters and motor controls. Its high-efficiency design and ultra-low on-resistance allow it to reduce system power dissipation and maximize power efficiency. Additionally, its fast switching capabilities enable the device to minimize total harmonic distortion, making it suitable for low-noise switching applications.

The MCH3376-TL-W is built on an N-channel technology, which involves two types of switching: voltage-controlled and drain current-controlled. The voltage-controlled switching is "noisy" compared to the drain current-controlled switching, with the former usually used for heavy current load applications, such as motor controls and DC-DC converters. The drain current-controlled switching is used for very fast switching applications, such as switching on/off power supply circuits or inverters.

The MCH3376-TL-W is a power MOSFET in which the drain-source voltage is operated by a MOSFET gate voltage. This MOSFET is characterized by its very low on-resistance, its fast switching speed, and its low gate drive power requirements. The gate drive voltage level used must be high enough to turn on the device. The gate voltage must be below the threshold voltage for the device to stay off. In addition, the internal gate capacitance must be charged up to the device’s threshold voltage to turn it on.

The gate input of the MCH3376-TL-W is designed to tolerate up to 17V gate-source voltage for a duration of 1ms. This feature helps protect the device from electrostatic discharge (ESD) and is critical for portable applications. Additionally, the device has an integrated gate-source clamping structure and a small gate-drain capacitance.

In summary, the MCH3376-TL-W is a high-efficiency N-channel enhancement-mode power MOSFET designed for high performance and low-power applications. This device offers an ultra-low on-resistance of 7 mOhm, an avalanche absorption voltage of 400V, and a maximum operating temperature of 150°C. Its fast switching speed enables the device to minimize total harmonic distortion, making it suitable for low-noise switching applications. Additionally, the device has an integrated gate-source clamping structure and a small gate-drain capacitance to protect it from electrostatic discharge.

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