MCH3486-TL-H Allicdata Electronics
Allicdata Part #:

MCH3486-TL-H-ND

Manufacturer Part#:

MCH3486-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 2A MCPH3
More Detail: N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount SC-70F...
DataSheet: MCH3486-TL-H datasheetMCH3486-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70FL/MCPH3
Package / Case: 3-SMD, Flat Leads
Description

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The MCH3486-TL-H is a collection of single high voltage MOSFETs developed by Mouser Electronics. It utilizes advanced technology to produce MOSFETs with high output current, excellent switching characteristics and low power consumption. This precise and reliable device provides designers with a compact component for a wide variety of applications, making it a suitable alternative for low-cost disk drives, power management, lighting control and consumer electronics.

The MCH3486-TL-H is a single high-voltage MOSFET which belongs to the family of transistors known as FETs (field effect transistors). MOSFETs are semiconductor devices which are used to control electric current as an electronic switch. They are also referred to as insulated-gate field effect transistors or IGFETs due to their insulated gate. Compared with traditional junction field-effect transistors, MOSFETs have several advantages, such as improved switching speed and higher input resistance.

The MCH3486-TL-H uses a silicon substrate and a floating gate insulated from the substrate. A voltage applied between the gate and the substrate is used to control the flow of current in the channel that exists between the drain and the source of the device. The output current of the MCH3486-TL-H is proportional to the applied gate voltage, and its maximum current, when on, is over 3A.

The MCH3486-TL-H provides high output current, excellent switching characteristics and low power consumption in a wide range of applications. Its low threshold voltage makes it suitable for power management, lighting control and consumer electronics. This MOSFET is also commonly used in low-cost disk drives, as it is easily integrated into digital circuits. Additionally, since the MCH3486-TL-H operates at high voltages, its internal structure is designed to avoid dielectric breakdowns.

The MCH3486-TL-H is an advanced device which offers impressive performance. Its high output current and low on-resistance make it an ideal choice in a variety of applications, while its low power consumption makes it suitable for low-cost, energy efficient applications. This reliable and cost-effective device provides an efficient electronic switch solution for designers in a wide range of industries.

The specific data is subject to PDF, and the above content is for reference

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