MCH3476-TL-H

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The MCH3476-TL-H is a single-channel enhancement-mode MOSFET with a maximum drain current of 10 A, a power dissipation of 150 W and an RDS(on) of 3 mOhms. This high-performance transistor is ideal for various voltage and current applications. For applications requiring low on-resistance and high gate source voltage, such as power switches, the MCH3476-TL-H is a good choice. In this article, the application fields and working principle of the MCH3476-TL-H will be explored.

Application fields

The MCH3476-TL-H is suitable for a wide range of applications including:

• High frequency regulation for DC/DC converters
• Power supply switching
• Gate drives for IGBTs and MOSFETs
• High power switching
• High efficiency amplifiers

The MCH3476-TL-H has an inherent temperature-dependent thermal shutdown feature which provides protection against overheating. This helps protect the device and the application from short-term events such as voltage spikes. This feature also helps ensure the device operates within its normal operating temperature range of -55°C to 150°C.

The MCH3476-TL-H has an internal ESD protection circuit which provides protection against static discharges. This helps reduce the chances of electrical overstress in the device and the application from static.

The MCH3476-TL-H is designed for operation with a power supply voltage range of 4.5-25V. It is available in surface mount packages of D-PAK and TO-252.

Working Principle

The MCH3476-TL-H is a enhancement-mode MOSFET (metal oxide semiconductor field effect transistor). It is a three-terminal device in which the source, gate, and drain are the three terminals. The source is connected to the gate and the drain is connected to the gate. When a gate voltage is applied to the MOSFET, the gate voltage is used to control the flow of current between the source and drain terminals.

The MCH3476-TL-H operates on the principle of capacitance. An electric field created by the applied gate voltage attracts or repels electrons on the surface of the semiconductor material. This allows current to flow in a controlled manner between the source and drain terminals when the device is turned on.

The MCH3476-TL-H has a low on-resistance which is expressed in ohms. This is the amount of resistance present when the transistor is fully turned on. A low on-resistance allows for more current to flow, thereby allowing the device to dissipate more heat. The RDS(on) rating given for a specific MOSFET device indicates the amount of on-resistance when the device is fully turned on.

The MCH3476-TL-H also has a high gate source voltage rating. This is the amount of voltage necessary to turn on the transistor. A high gate source voltage allows the transistor to withstand higher voltages, providing higher reliability in voltage applications.

Conclusion

The MCH3476-TL-H is a single-channel enhancement-mode MOSFET with a maximum drain current of 10A, a power dissipation of 150W, and an RDS(on) of 3mOhms. It is ideal for various voltage and current applications requiring low on-resistance and high gate source voltage, such as power switches. It is designed for operation with a power supply voltage range of 4.5-25V and is available in surface mount packages of D-PAK and TO-252.

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