MGSF1N02LT1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MGSF1N02LT1 is a single N-channel Enhancement-mode Power MOSFET designed for high-speed switching and linear applications. With its low threshold voltage, low capacitance and low total gate charge, the MGSF1N02LT1 is ideal for low-frequency and high-power applications, such as power inverters, switching motor drives, power supplies and DC/DC converters. The MGSF1N02LT1 features an anodically bonded n-channel silicon gate, an Insulated Gate Bipolar Transistor (IGBT) structure, and an insulated gate for superior performance and reliability.

The MGSF1N02LT1 has a maximum drain source voltage rating of 30V, and a maximum drain current rating of 16A. It has a maximum power dissipation rating of 70W, with a junction temperature of up to 150C. It also has a low total gate charge of 3.2nC and a low output capacitance of 70pF. The on-resistance of the MGSF1N02LT1 is typically 0.08Ω, with a maximum of 0.26Ω. In addition, it has a Fast Switching speed of 8V/ns.

The working principle of the MGSF1N02LT1 is similar to that of a conventional MOSFET, except that the gate structure has a layer of insulation between the gate and the channel. This insulated gate allows for a lower threshold voltage and faster switching speeds. When a voltage is applied to the gate, the insulation between the gate and the channel breaks down, allowing for current to flow. As the gate voltage increases, the amount of current allowed to flow through the MOSFET increases, allowing for more efficient power transfer.

The MGSF1N02LT1 is ideally suited for a wide range of applications, including power modules, high-frequency switching, power amplifiers, power management and control systems, as well as high-power switching applications. It is also used in TV sets and computer monitor power supplies, audio amplifiers, automotive power systems, and other industrial equipment. The device’s low on-state resistance and high current capability makes it ideal for high-power and high-speed switching.

In conclusion, the MGSF1N02LT1 is a single N-channel Enhancement-mode Power MOSFET designed for high-speed switching, linear applications, and power management and control systems. With its low threshold voltage, low capacitance, low total gate charge, and low on-state resistance, the MGSF1N02LT1 is ideal for high-power and high-speed switching applications. It also features a Fast Switching speed of 8V/ns and a maximum power dissipation rating of 70W.

The specific data is subject to PDF, and the above content is for reference