MGSF2N02ELT1G Discrete Semiconductor Products

The MGSF2N02ELT1G is an epitaxial N-channel enhancement-mode MOSFET. This device is typically used for light load switch applications, and offers superior switching, ESD protection, and power handling capability when compared to traditional discrete devices. It is part of a family of enhancement-mode MOSFETs manufactured by ON Semiconductor.

Application Field

This device is used in many light load switching applications, such as automotive, medical, and industrial. It can be used to switch between power rails, to control motor speed in brushless DC motor controllers, to manage relay power, and more. Thanks to its superior ESD protection, the MGSF2N02ELT1G offers protection against current spikes and other environmental conditions that can cause damage to circuitry.

Working Principle

An enhancement-mode MOSFET is a three-terminal device in which the performance of the transistor is affected by the gate-to-source voltage applied to the gate terminal. When the voltage applied to the gate terminal is of the opposite polarity to the built-in source junction, it adjusts the course of the channel in the presence of an electric field in the region of the gate, enhancing the conduction of the source-to-drain channel. When the voltage applied to the gate terminal is of the same polarity as the built-in source junction, it adjusts the course of the channel in the presence of an electric field in the region of the gate, decreasing the conduction of the source-to-drain channel. So, this MOSFET can be used to control the current that flows from the source to the drain terminal.

The MGSF2N02ELT1G is designed with a low-threshold gate, meaning that gate-to-source voltage needs to be relatively low before it can carry current. This device is also designed with a low on-resistance, meaning it will have a low voltage drop when operating at relatively low voltages. This makes it ideal for low voltage and low power applications in which higher performance is desired.

The MGSF2N02ELT1G is designed with an ESD protection structure. This structure is designed to protect the device from electrostatic discharge that can occur from simply touching it. It also helps to protect against surges from power lines, lightning, and other sources of high voltage.

The MGSF2N02ELT1G is used in many light load switching applications. Thanks to its superior ESD protection and its low on-resistance, it offers superior performance compared to traditional discrete switching devices, making it ideal for a variety of applications. From automotive to medical to industrial, the MGSF2N02ELT1G can be used for precise switching and power handling.