MGSF1N03LT3G

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MGSF1N03LT3G is a high-current MOSFET from Toshiba\'s MOSFET Transistor lineup. It is a three-terminal device that is mainly used for power switching applications and features a low RDS (on) and high-speed switching. This device is an ideal solution for a variety of applications, including switching converters and dc-motor control circuits.

The MGSF1N03LT3G has a maximum drain current of 1.2A and drain-source voltage rating of 30V. It is available in a package size of SOT-223, with a maximum power dissipation of 3.2W. Applications include motor control, display backlight dimming, and low-power switching.

The main advantage of the MGSF1N03LT3G is that it can effectively handle high current at relatively low gate voltage. It also offers high-speed switching, with a switching speed of 2.2nC max, and a maximum input capacitance of 200pF. The device is a voltage-driven device and is an ideal choice for low-power switching.

The MGSF1N03LT3G is a non-polarized N-channel depletion-mode FET. It is constructed in such a way that when the gate voltage is below the threshold voltage level, the device remains off. When the gate voltage increases and exceeds the threshold voltage, the FET turns on and drain current will start to flow.

The MGSF1N03LT3G is designed to provide high-precision switching, with very low levels of power dissipation, making it suitable for power applications where space and cooling are of prime importance. It also features a breakdown voltage of 700V, and a maximum drain-source on resistance of 8mΩ. It is also highly reliable, with a mean-time-to-failure of more than 600k hours.

The MGSF1N03LT3G is an excellent choice for a variety of applications, including automotive, consumer, industrial, and medical. It is suitable for high-current switching, low-power switching, motor control, display backlight dimming, and voltage level shifting. It is also a cost-effective and reliable solution for switching converters and dc motor control circuits.

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