Allicdata Part #: | MGSF1N03LT1OSCT-ND |
Manufacturer Part#: |
MGSF1N03LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 1.6A SOT-23 |
More Detail: | N-Channel 30V 1.6A (Ta) 420mW (Ta) Surface Mount S... |
DataSheet: | MGSF1N03LT1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 420mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 5V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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MGSF1N03LT1, or Power MOSFET, is a type of field effect transistor (FET) designed for high-power applications such as power switching and motor control. It has a single gate structure and is capable of operating at high voltages and currents. It is also relatively easy to use and has become the device of choice for high-power applications.
The working principle behind the MGSF1N03LT1 is very similar to that of a regular FET. As current is applied to the gate of the FET, it releases electrons, which are called "congress". These electrons are attracted to the drain of the FET, forming an electric current. This current can then be used to control the power switch or motor. The current through the MGSF1N03LT1 can range from very low levels up to very high levels.
The MGSF1N03LT1 also has several advantages over regular FETs. For one, it has a higher power rating, which means it can switch power at higher levels than a regular FET. It also has a higher frequency of operation, meaning it can operate at higher frequencies than a regular FET. Additionally, the MGSF1N03LT1 can be used in a wide range of applications such as power switching, motor control and audio amplification.
The MGSF1N03LT1 is most often used in applications where high power levels are necessary. These include motor control, power switching and fault detection. It is also used as an amplifier in many audio applications, as well as for low frequency filtering or voltage regulation. The device can handle large amounts of power in a relatively small package, making it an ideal choice for designers looking for a powerful and reliable solution.
In addition to its wide range of applications, the MGSF1N03LT1 also has some unique advantages. For instance, it is considered to be a low-voltage device, meaning it can be used in situations where normal FETs would not be suitable. Additionally, the MGSF1N03LT1 can withstand high temperatures, making it suitable for high-temperature applications such as in car engines and other high-power applications.
In summary, the MGSF1N03LT1 is an ideal choice for designers looking for a powerful and reliable solution for their high-power applications. It is a low-voltage device that can handle large amounts of power in a small package, making it suitable for a wide range of applications such as motor control, power switching and audio amplification. It is also a robust device that can withstand high temperatures, making it suitable for high-temperature applications such as in car engines and other high-power applications.
The specific data is subject to PDF, and the above content is for reference
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