MGSF1N03LT3

Vgs(th) (Max) @ Id:	2.4V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	420mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	140pF @ 5V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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MGSF1N03LT3 is a single-drain type metal-oxide-semiconductor field-effect transistor (MOSFET) applicable for low-voltage and low-current driving applications. It is designed with some type of junction field effect (JFET) technology and is optimized to provide high performance and low power consumption. The MGSF1N03LT3 is used in many different fields and applications, primarily for its robustness and ability to provide reliable and low-noise operation in both low voltage and low current driving environments.The MGSF1N03LT3 has two distinct control terminals, the gate and the drain. The gate is the input terminal of the circuit, where the external control signal is applied. The drain is the output terminal of the circuit, from which the output voltage is taken. The transistor works on the principle of Coulomb\'s law, which states that like charges repel and opposite charges attract. When a voltage is applied to the gate of the MGSF1N03LT3, current flows between the source and the drain, allowing a certain amount of current to pass through the drain. The MGSF1N03LT3 is therefore a voltage-controlled current device, meaning that the current can be regulated by varying the applied voltage at the gate.The MGSF1N03LT3 is used in a wide range of applications, most notably, power management systems, telecommunications, and consumer electronics. In power management systems, the transistor is used for low-voltage motor, motor device, and appliance control. As it is able to operate on low voltage and low current, it is able to reduce the size and power consumption of the power management systems. In telecommunications, the transistor is used as a buffer amplifier to ensure high speed, low noise, and low power consumption in fibre optic communication systems. In consumer electronics, it is used as a logic switch in voltage regulators and voltage detectors due to its low-power consumption characteristics.The MGSF1N03LT3 is widely used in automotive applications, where it is used for the purpose of controlling LED headlamps and in fuel-injection systems. The transistor is also used in lighting systems, and it provides an efficient solution for controlling the amount of light being emitted by LED lights.The MGSF1N03LT3 is a versatile and efficient transistor suited for many different applications due to its low-voltage and low-current driving capability and its high-frequency, high-performance characteristics. It is designed to provide low power consumption and reliable operation in low-voltage and low-current driving environments. It is a suitable choice for many applications, such as power management systems, telecommunications, consumer electronics, automotive, and lighting systems.

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