MIXA40WB1200TED Allicdata Electronics
Allicdata Part #:

MIXA40WB1200TED-ND

Manufacturer Part#:

MIXA40WB1200TED

Price: $ 44.23
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 40A
More Detail: IGBT Module PT Three Phase Inverter with Brake 120...
DataSheet: MIXA40WB1200TED datasheetMIXA40WB1200TED Datasheet/PDF
Quantity: 1000
6 +: $ 40.20560
Stock 1000Can Ship Immediately
$ 44.23
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Power - Max: 195W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 2.1mA
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2
Description

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MIXA40WB1200TED Application Field and Working Principle

MIXA40WB1200TED is a type of insulated gate bipolar transistors (IGBT) modules. It is designed for voltage classes from 1200V up to 1500V and with a continuous current rating of up to 40A. It also has a temperature rating of -40°C to +125°C.

IGBT modules are widely used in applications such as Motor Drives, Uninterruptible Power Supplies, Industrial Heating, Power Converters, and Automotive applications. IGBTs are semiconductor devices that combine a low on-state voltage drop, low switching losses, and fast switching speeds with low gate drive requirements.

This IGBT module utilizes a small size package, thus it can fit into small and compact spaces, which makes it very suitable for use in applications that demand a high power density. It also has a low gate resistor and low gate drive current requirements.

The MIXA40WB1200TED has an integrated bootstrap diode, which can provide extra gate drives when operating under extreme current operations, thus enabling the gate’s protection. The module also includes a temperature sensor that can provide the real-time temperature feedback, thus it can act as a safety measure when operating near the overload limit.

This IGBT module works with a principle of voltage control. When the voltage is applied to the gate, the current will begin to increase, thereby turning the power device on. Once the current exceeds the turn-on threshold, the power device is now in on-state and the current will continue to flow from source to drain. By controlling the applied voltage to the gate, the current can be made to increase, or decrease.

The module also supports PWM (Pulse Width Modulation) applications. It allows the duty cycle to be controlled, by changing the on and off times of the current through the gate. This means that the current can be made to rise and fall at different rates, with one duty cycle equalling one complete cycle of a waveform. This feature is valuable for applications such as motor drives, or power converters, where a variable speed and fast response times are desired.

In conclusion, the MIXA40WB1200TED is an excellent choice for a wide range of applications that require a power device with low on-state voltage drop, low switching losses, fast switching speeds, and low gate resistor and drive current requirements. It is also an attractive option due to its small size, integrated bootstrap diode, and temperature feedback.

The specific data is subject to PDF, and the above content is for reference

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