MIXA80W1200TEH Allicdata Electronics
Allicdata Part #:

MIXA80W1200TEH-ND

Manufacturer Part#:

MIXA80W1200TEH

Price: $ 71.13
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 84A
More Detail: IGBT Module PT Three Phase Inverter with Brake 120...
DataSheet: MIXA80W1200TEH datasheetMIXA80W1200TEH Datasheet/PDF
Quantity: 1000
5 +: $ 64.66320
Stock 1000Can Ship Immediately
$ 71.13
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 120A
Power - Max: 390W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
Current - Collector Cutoff (Max): 200µA
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3
Description

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An IGBT module such as the MIXA80W1200TEH combines power electronics with intelligent control features, making it a reliable and safe option for many applications, from motor control and low power loads to more power-intensive electric power applications. The major benefit of an IGBT module is the ability to switch electric power quickly and safely, enabling you to get the most out of your power requirements.

The structure of an IGBT module is essentially the same as an N-MOSFET. It essentially consists of an insulated gate junction and a highly conductive, insulated connection between the gate and the source and drain (the source and drain can be connected together). These insulated junctions are separated by a thin layer of insulation, or insulator. This junction and insulation allows the IGBT module to handle up to 2.75 kilowatts of power without any risk of over-current or over-voltage.

The MIXA80W1200TEH IGBT module is designed to operate at a peak forward voltage rating of +800V with a maximum current rating of +1200A. Such ratings make them suitable for low voltage, high current load applications and motor control. The module also has a low internal capacitance and low stray capacitance, making it ideal for power switching and high frequency operation. The module has an insulation class rating of T-0.5 and a chip temperature of -40°C to +125°C.

The working principle of an IGBT module is relatively simple. When the gate is given a positive (high) voltage, electrons are attracted to the gate’s negative electrode. This causes a shift in the electrical field of the junction and causes the IGBT module to conduct electricity. Similarly, when the gate is given a negative (low) voltage, electrons are repelled from the gate’s negative electrode, stopping the current flow.

The MIXA80W1200TEH IGBT module can be used in several applications. These include motor control, digital power supply applications, DC-DC converters and rectifiers, AC-DC converters, and AC-AC power factor correction converters. The module also has a wide temperature range (-40°C to +125°C), making it suitable for operation in harsh environments. It can be used in industrial and commercial applications or wherever a reliable and compact power solution is required.

In summary, the MIXA80W1200TEH IGBT module is a reliable and safe option for a variety of power electronics applications due to its ability to quickly and safely switch power. The module has a wide temperature range and low internal capacitance, which make it ideal for power switching and high-frequency operations. With its high voltage and current ratings, the module is suitable for low voltage, high current load applications and motor control. It is a popular choice for motor control, digital power supply applications, DC-DC converters and rectifiers, AC-DC converters, and AC-AC power factor correction converters.

The specific data is subject to PDF, and the above content is for reference

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