MIXA30W1200TED

Series:	--
Part Status:	Active
IGBT Type:	PT
Configuration:	Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	43A
Power - Max:	150W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 25A
Current - Collector Cutoff (Max):	2.1mA
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	E2
Supplier Device Package:	E2

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Introduction

The MIXA30W1200TED is an insulated gate bipolar transistor (IGBT) module with a rated voltage of 1200V. It belongs to a device family of semiconductor switches, which is called Transistors-IGBTs-Modules. It contains one six-pin single-phase IGBT that can be used in a wide range of applications. This article will discuss the application field of the MIXA30W1200TED and its working principle.

Application Field of the MIXA30W1200TED

The MIXA30W1200TED is suitable for applications such as AC/DC conversion, motor control, and rectifying applications. It has higher switching speed and more transient capability than conventional thyristors and other power semiconductor switches. It is used in many different application fields such as automotive, industrials, medical, and consumer electronics.

Advantages of the MIXA30W1200TED

The MIXA30W1200TED has many advantages, including a wide operating temperature range, low switching losses, and low conduction losses. Its low conduction loss reduces the current through the device thus reducing power losses and improving system efficiency. Its high switching speeds also reduce turn-on and turn-off times, allowing for faster response to inputs and more stable operation.

Working Principle

The MIXA30W1200TED is a semiconductor switch, which means that it has two distinct states: on and off. When the device is in its on state, the current flows through the semiconductor and the output voltage is close to the input voltage. When the device is in its off state, the current does not flow through the semiconductor, and the output voltage drops to close to zero.In the MIXA30W1200TED, the gate terminal is used to control the on/off state of the device. When a voltage is applied to the gate terminal, the charge carriers (electrons and holes) accumulate in the buffer layer, which creates a field that inverts the transistor from off state to on state. When the voltage is removed from the gate terminal, the charge carriers dissipate and the transistor returns to off state. The current handling capability of the MIXA30W1200TED is determined by its rated current, which is specified to be 30A. This rated current can be increased by applying voltage to the emitter terminal, which increases the current gain of the device and allows it to switch higher currents.

Conclusion

The MIXA30W1200TED is an insulated gate bipolar transistor (IGBT) module with a rated voltage of 1200V. It has many advantages over other power semiconductor switches and is suitable for applications such as AC/DC conversion, motor control, and rectifying applications. The working principle of the MIXA30W1200TED is based on the accumulated charge carriers in the buffer layer, which creates an applied field across the device and inverts it from off state to on state. The device also has a rated current of 30A which can be increased by applying voltage to the emitter terminal.

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