MIXA150Q1200VA

Series:	--
Part Status:	Active
IGBT Type:	PT
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	220A
Power - Max:	695W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 150A
Current - Collector Cutoff (Max):	100µA
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	V1A-PAK
Supplier Device Package:	V1A-PAK

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.Transistors - IGBTs - Modules - MIXA150Q1200VA Application Field and Working PrincipleThe MIXA150Q1200VA is an N-channel, insulated-gate bipolar transistor (IGBT) module that works with various application fields. It is suitable for automotive, industrial, and home appliances. The module is constructed on the basis of an IGBT, an insulated gate and a freewheeling diode to guarantee a high-speed switching action with low conduction losses. The IGBT is a three-terminal semiconductor device with a typical application in switching and high-speed amplification applications. It has both the properties of a bipolar junction transistor (BJT) and a high-power metal-oxide semiconductor transistor (MOSFET). The IGBT combines the benefits of a low power loss of the MOSFET and low C–R of the BJT, improving the characteristics of both transistors.The principle of operation of the MIXA150Q1200VA IGBT module is based on the control of the current between the collector and emitter of the IGBT. The insulated gate at the center of the IGBT is responsible for turning the device on and off. When the gate is ‘on’ it allows current to flow through the collector-emitter junction, thus making the device conductive. This results in a voltage of around 900V drop across the collector and emitter, depending upon the current applied to the gate.When the gate of the IGBT is ‘off’, the device stops conducting and the voltage is no longer able to pass through the collector-emitter junction. The IGBT module also has a built-in diode which helps to prevent current flow in the reverse direction. This is useful for applications where current flow can be reversed frequently, as it prevents damage to the device.The MIXA150Q1200VA IGBT module is suitable for switch mode power supply (SMPS) applications in the fields of automotive, industrial and home appliances. The module has a higher speed of operation compared to other modules and can operate at a frequency of up to 1.2kHz. The device is also robust and has a high degree of reliability. The module can handle an inrush current of up to 600A and is capable of switching a very high power of up to 15000W.The MIXA150Q1200VA IGBT module operates with a wide range of inputs including AC and DC voltage sources. The device has a high surge protection capability and provides safety for other components in the circuit. The module has built-in protection against short-circuiting and overheating thus protecting both the IGBT and other components from damages.In brief, the MIXA150Q1200VA IGBT module is a robust, high-power device that is suitable for various applications. It is capable of handling a very high power and can switch at high speeds. It provides safety features to prevent damage to the device and other components and offers wide compatibility with various AC and DC voltage sources.

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