MIXA61H1200ED

Series:	--
Part Status:	Active
IGBT Type:	PT
Configuration:	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	85A
Power - Max:	290W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 55A
Current - Collector Cutoff (Max):	500µA
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	E2
Supplier Device Package:	E2

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MIXA61H1200ED Application Field and Working PrincipleThe MIXA61H1200ED is a high-speed insulated gate bipolar transistor (IGBT) module with wide application in power electronics. This device offers high-efficiency switching performance combined with extremely low switching losses, making it suitable for heavy duty power electronic applications. The MIXA61H1200ED is a versatile and robust device that can be used to control high power in a variety of industrial, automotive, medical, and electrical equipment.The MIXA61H1200ED is constructed of an insulated gate bipolar transistor (IGBT) and fast-recovery rectifier diodes on a single substrate. The IGBTs are composed of one p-type and one n-type layer of silicon, forming a semiconductor junction that has low forward voltage drop and high switching speed. The IGBTs are designed for higher current capabilities than other similar transistors and can operate at voltage up to 1200 volts. The rectifier diodes used in the MIXA61H1200ED are fast recovery, meaning that they can handle large, rapidly changing currents without generating a large amount of heat, making them suitable for switching large amounts of current in high voltage applications. These diodes also provide protection against reverse current (current flowing in the wrong direction).The MIXA61H1200ED’s wide operating range makes it suitable for applications in industrial electrical power systems, such as variable speed drives, inverters, UPS systems, and solar inverters. It is also suitable for the automotive sector, providing power to electric and hybrid electric vehicles. This device has applicability in point-of-load, radio frequency, and uninterruptible power supply (UPS) applications as well.The MIXA61H1200ED operates on the principle of controlling the switching of current passing through it. It does this by regulating the voltage across the semiconductor junction, which then controls the amount of current through the junction. In a IGBT module such as the MIXA61H1200ED, a gate voltage is applied to the junction to turn the device ON or OFF. The applied voltage controls the conduction across the junction and the current that passes through it.When the gate voltage is present, the IGBT is turned ON and a current flows through the junction. When the gate voltage is not present, the IGBT will be OFF, and no current will flow. This is why IGBTs are used in switching circuits, as they can quickly and easily switch between ON or OFF states in order to regulate the flow of current. The MIXA61H1200ED’s fast switching speeds and low losses make it suitable for high voltage applications such as electric and hybrid vehicles, industrial power systems, point-of-load, radio frequency, and UPS applications. Its robust construction and high reliability make it suitable for a variety of demanding applications. The MIXA61H1200ED is a reliable and durable device that can be used to power a variety of industrial and consumer applications.

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