MIXA30W1200TML Allicdata Electronics
Allicdata Part #:

MIXA30W1200TML-ND

Manufacturer Part#:

MIXA30W1200TML

Price: $ 27.26
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 30A
More Detail: IGBT Module PT Three Phase Inverter with Brake 120...
DataSheet: MIXA30W1200TML datasheetMIXA30W1200TML Datasheet/PDF
Quantity: 1000
10 +: $ 24.78420
Stock 1000Can Ship Immediately
$ 27.26
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 43A
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Current - Collector Cutoff (Max): 150µA
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1
Description

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MIXA30W1200TML Application Field and Working Principle

The MIXA30W1200TML is a 1200V insulated-gate bipolar transistor (IGBT) module designed for use in a variety of motor drive applications, such as motor drives, air-conditioner fans, washing machines, and solar-power inverters. The high-speed and high-voltage IGBT modules in the MIXA30W1200TML series feature small, compact package sizes and low power consumption, making them suitable for a variety of medium, high, and ultra-high power applications.

The IGBTs used in the MIXA30W1200TML are planar type IGBTs, which feature low input capacitance and low on-state resistance (Vce(on), max). This helps to achieve improved switching performance and lower switching loss, allowing them to operate at higher power levels than conventional modules.

The MIXA30W1200TML series is comprised of high-speed IGBT modules featuring an improved repetitive avalanche energy rating. This helps to maximize the energy delivered to the load during transients. The high-voltage IGBTs also feature high junction temperature ratings, allowing them to be used in high temperature environments. Additionally, these modules feature negative-temperature coefficient, enabling improved thermal stability.

The MIXA30W1200TML series features fast reverse recovery, allowing the IGBTs to respond quickly to overcurrent conditions. The fast reverse recovery also helps to minimize switching losses, allowing the modules to operate at higher power levels. In addition, the IGBTs feature built-in circuitry for self-protection, ensuring that the modules are optimized for operation in harsh conditions.

The working principle of MIXA30W1200TML is based on the use of two diodes stacked side by side, forming an insulated gate bipolar transistor (IGBT). The two diodes are connected to a small gap, which is the gate. When the voltage applied to the gate is increased, a current flows through the gap and the two diodes, allowing the electrons to be ionized and transferred to the IGBT. This current flow allows the IGBT to modulate the voltage applied to the load, thus controlling the power delivery.

The MIXA30W1200TML series offers many advantages, including low power consumption, fast turn-on and off speeds, high voltage ratings, and high speed operation. The use of planar type IGBTs in the MIXA30W1200TML series also helps to reduce the size and cost of the modules, making them ideal for applications where space and cost are critical. Furthermore, the integrated self-protection circuitry helps to ensure that these modules are optimized for operation in harsh operating conditions.

In summary, the MIXA30W1200TML series of high voltage IGBT modules offers superior performance in motor drive applications, thanks to their low power consumption, fast turn-on and off speeds, high voltage ratings, and high speed operation. Their small, compact package size and integrated self-protection circuitry also make them ideal for space- and cost-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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