MIXA300PF1200TSF

MIXA300PF1200TSF is a type of isolated gate bipolar transistor (IGBT) module. It is a reliable high-performance module that has pre-integrated IGBT paralleled with antiparallel freewheeling diodes, as well as suitable snubbers and over-current protection networks. It is designed to be used for high frequency, fast switching and pulse time-controlled systems.

The MIXA300PF1200TSF has several features. It features a fast switching time, triggering voltage level to sub micro-second level, rated phase current of up to 300A, phase voltage of 1200V (Tc = 25°C) and switching frequency of up to 2000kHz. It also has a wider operational temperature range of -40°C to +120°C, improved power density and EMI/RFI protection. Furthermore, the module provides protection against over-temperature, over-voltage and over-current.

The MIXA300PF1200TSF can be used in a wide range of applications. It is suitable for use in inverters, UPS, speed controlling, motor drives and other motor-control systems. Due to its high frequency fast switching performance and pulse time-controlled switching time, the MIXA300PF1200TSF is ideal for power conversion control, power electronics-based energy recovery systems and various other industrial automation processes.

MIXA300PF1200TSF works by switching high voltage energy. It consists of two or more IGBTs that are electronically connected in parallel and antiparallel with the diodes. During operation, the voltage wave is applied to both the IGBTs and the diodes. The IGBTs are permanently on, thus allowing currents to flow through the load while the current wave signals the IGBTs to block. The diodes act as the completion link when the IGBT is blocked and current continues to flow through the diodes. The switching speed of the MIXA300PF1200TSF is controlled by the signal frequency provided to trigger the IGBTs.