MIXA60HU1200VA Allicdata Electronics
Allicdata Part #:

MIXA60HU1200VA-ND

Manufacturer Part#:

MIXA60HU1200VA

Price: $ 27.50
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 60A
More Detail: IGBT Module PT 2 Independent 1200V 85A 290W Chassi...
DataSheet: MIXA60HU1200VA datasheetMIXA60HU1200VA Datasheet/PDF
Quantity: 1000
24 +: $ 24.99130
Stock 1000Can Ship Immediately
$ 27.5
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 85A
Power - Max: 290W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Current - Collector Cutoff (Max): 500µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1A-PAK
Supplier Device Package: V1A-PAK
Description

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MIXA60HU1200VA is a transistor module designed for high-frequency power conversion. It is an insulated gate bipolar transistor (IGBT) module that combines an IGBT and a diode. It is mainly used in high power-frequency applications, including AC/DC and DC/DC power conversion, and high-efficiency inverters.

The module consists of four IGBTs combined in a parallel connection and two diodes connected in a bridge configuration, one being an antiparallel diode and the other being a freewheeling diode. This combination of transistors and diodes results in a high-performance, low-loss power converter module. The IGBTs used in the module have a blocking rating of 1200 volts and a maximum current rating of 60 amperes.

The IGBTs in the MIXA60HU1200VA are capable of switching on and off at high frequencies, allowing them to be used in a variety of applications. These applications include motor control, starting and stopping of motors, switching of AC circuits, and as a power amplifier for high power operated machines. The module can also be used for static or dynamic phase angle control, pulse-width modulation, voltage and current regulation, and frequency control.

The working principle of MIXA60HU1200VA involves the use of the gate to control the conduction of the main current through the IGBTs. When the gate voltage is applied, the main current begins to flow. As the gate voltage is changed, the potential of the main current also changes, allowing the IGBTs to open or close. This in turn modulates the voltage and current of the device. The two diodes in the module provide an alternate path for the current when the IGBTs are open. This prevents the power supply from being disrupted and also reduces the amount of power wasted when switching.

The MIXA60HU1200VA module is capable of handling high voltages and currents, making it ideal for applications requiring high levels of power. Its ability to switch on and off quickly makes it suitable for power conversion applications, allowing users to achieve high efficiency at lower power levels. Its combination of four IGBTs and two diodes makes it better suited for high frequency applications, allowing for faster switching and greater efficiency.

The MIXA60HU1200VA is an excellent choice for high power-frequency applications, a proven and reliable solution for device protection, and efficient power conversion. With its high-efficiency IGBTs, sophisticated design, and robust construction, it provides superior performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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