MIXA60WB1200TEH Allicdata Electronics
Allicdata Part #:

MIXA60WB1200TEH-ND

Manufacturer Part#:

MIXA60WB1200TEH

Price: $ 62.74
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 60A
More Detail: IGBT Module PT Three Phase Inverter with Brake 120...
DataSheet: MIXA60WB1200TEH datasheetMIXA60WB1200TEH Datasheet/PDF
Quantity: 1000
5 +: $ 57.04270
Stock 1000Can Ship Immediately
$ 62.74
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 85A
Power - Max: 290W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Current - Collector Cutoff (Max): 500µA
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3
Description

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The MIXA60WB1200TEH is part of a family of transistors known as insulated-gate bipolar transistors (IGBTs). This type of transistor combines field-effect transistor (FET) and bipolar junction transistor (BJT) designs together and is an important power switching component in a variety of applications. It is capable of controlling and managing large currents in applications such as motor control, power conditioning, and other industrial applications.

The IGBT is designed to be more efficient than a BJT since it is formed of two p-n junctions instead of one. The MIXA60WB1200TEH utilizes this advantage by featuring a high-current handling capacity and a low on-resistance value, making it able to manage large currents in a variety of applications. Additionally, its high immunity to short-duration voltage spikes helps protect against voltage irregularities and errors on the system.

The MIXA60WB1200TEH module is used in applications such as motor control, power conditioning, power supplies, solar power conversion systems, uninterruptible power supplies, and other industrial systems. In motor control applications, the transistor can be used to drive and control the speed of an AC induction motor. The MIXA60WB1200TEH module is also compatible with control signals such as pulse width modulation (PWM), phase angle control, and variable voltage control, making it a versatile choice for motor control.

The MIXA60WB1200TEH’s working principle is simple. It is based on the switching of FET transistors and the linearity of BJTs. The IGBT module is controlled by a gate drive circuit, which switches the FET transistors on and off. The gate drive circuit also controls the current flow through the BJTs, which gives the IGBT its excellent performance in linearity and power transfer. The IGBT module features a fast switching speed, making it a suitable choice for high-speed applications.

In conclusion, the MIXA60WB1200TEH is a high-efficiency IGBT module that provides excellent power handling capabilities and can be used in a variety of applications. Its ability to control currents, coupled with its compatibility with control signals such as PWM, make it a powerful choice for applications requiring efficient power transfer. Furthermore, its ability to withstand short-duration voltage spikes helps protect against voltage irregularities and errors on the system.

The specific data is subject to PDF, and the above content is for reference

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