MIXA80W1200TED Allicdata Electronics
Allicdata Part #:

MIXA80W1200TED-ND

Manufacturer Part#:

MIXA80W1200TED

Price: $ 67.40
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 84A
More Detail: IGBT Module PT Three Phase Inverter with Brake 120...
DataSheet: MIXA80W1200TED datasheetMIXA80W1200TED Datasheet/PDF
Quantity: 1000
6 +: $ 61.27590
Stock 1000Can Ship Immediately
$ 67.4
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 120A
Power - Max: 390W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
Current - Collector Cutoff (Max): 200µA
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2
Description

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MIXA 80W1200TED is an intelligent power device that belongs to the IGBT modules family. It combines the advantages of both IGBTs and MOSFETs that are used for a variety of power management and well power delivery solutions. This intelligent power device is capable of controlling the voltage and current of the load by providing a wide range of functionalities such as power control, over-current protection and EMC/electrostatic discharge protection.
The application field of the MIXA 80W1200TED consists of a variety of industrial and commercial applications such as motor control, HVAC, variable frequency drives, and power electronics. It is especially suitable for high temperature environments and harsh environmental conditions. This power device has a wide temperature range operation and a high resistance to bias temperature instability, making it suitable for high-temperature applications. It also has an internal thermal protection and over voltage protection functions, which enable it to operate with high reliability.
The working principle of the MIXA 80W1200TED is based on the principle of IGBT. It consists of two FETs in series, each with an opposite polarity gate voltage applied. The voltage difference of the two FETs is the main parameter that determines the working state of the device. The higher the voltage difference, the higher the power and current output of the device. When the device is in off state, the voltage between the two FETs is zero and no current can flow through the device.
The MIXA 80W1200TED provides a number of performance advantages over other IGBT based intelligent power devices. It has a high level of efficiency, low switching loss and low gate-drain charge. It also has a tight parameter control, which allows for precise current setting and precise timing of turn on and turn off. Furthermore, the device operates with a low noise level and is capable of high-frequency operation up to 20kHz. The device also provides an ideal solution for short circuit protection and EMC/ESD transient protection.
In conclusion, the MIXA 80W1200TED is an intelligent power device that is suitable for a variety of industrial and commercial applications. It combines the advantages of both IGBTs and MOSFETs to provide a reliable and efficient power delivery solution. The device is capable of precise current setting and precise timing of turn on and turn off. Furthermore, it provides an ideal solution for short circuit protection and EMC/ESD transient protection. It is suitable for high temperature environments and harsh environmental conditions, making it an ideal solution for power delivery applications.

The specific data is subject to PDF, and the above content is for reference

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