MIXA100W1200TEH Allicdata Electronics
Allicdata Part #:

MIXA100W1200TEH-ND

Manufacturer Part#:

MIXA100W1200TEH

Price: $ 80.65
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT MODULE 1200V 108A HEX
More Detail: IGBT Module PT Three Phase Inverter 1200V 155A 500...
DataSheet: MIXA100W1200TEH datasheetMIXA100W1200TEH Datasheet/PDF
Quantity: 1000
5 +: $ 73.31450
Stock 1000Can Ship Immediately
$ 80.65
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 155A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 300µA
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3
Description

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The MIXA100W1200TEH is one of the latest modules to join the range of MOSFETs and IGBTs. It is a transistor module which consists of multiple power semiconductor devices such as Field Effect Transistors (FETs), Insulated Gate Bipolar Transistors (IGBTs), as well as Silicon Controlled Rectifiers (SCRs). This powerful module can be used to control and switch high currents and makes it an ideal choice for industrial applications where there is a need to safely and effectively control high power. In this article, we will explore the application field and working principle of the MIXA100W1200TEH.MOSFETs can be found in almost all modern electronic devices, from satellite dishes to personal computers. They are used to effectively control and switch electrical signals, as well as to reduce power losses in high power circuits. In order to ensure the safe operation of the device, transistors like the MIXA100W1200TEH are used to maximize the durability and protect the surrounding devices from possible failures. The major application field for the MIXA100W1200TEH is high-power switching and motor control. This type of application requires highly reliable devices which can switch currents of up to 1200A with up to 100V, while remaining efficient and effective. This module is designed to offer a high degree of reliability and flexibility, allowing it to handle applications in industrial, consumer, transportation, and other industries.Another important use of the MIXA100W1200TEH is in the telecommunications industry. This module is designed to provide reliable and effective switching and control signals for communications systems. It can be used for both analog and digital applications and provides excellent performance in high-performance applications such as satellites and cell phones.In terms of its principle of operation, the MIXA100W1200TEH is a power electronics device which uses the Gate Turn-off (GTO) principle to switch high currents and safely control high power. This device works on the principle of the electrical charge stored in its gate. When the gate is charged and turned off, the current flow is interrupted and the device ceases to conduct. By altering the current flow through the gate, the strength of the current flow can be varied, allowing the user to precisely control high power with minimum losses. Overall, the MIXA100W1200TEH is a powerful and highly reliable transistor module designed to handle industrial applications where high currents and power are required. It features an impressive range of features including a high degree of protection, flexibility, and reliability. Its GTO switching and control principle allow it to provide efficient and effective control in communications systems and high-power applications.

The specific data is subject to PDF, and the above content is for reference

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