MJ11015G

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Introduction

The MJ11015G is a medium power NPN silicon bipolar transistor. It is used in a variety of applications including switching circuits, amplifier and switching applications. The MJ11015G has high current gain, collector current storage, speed and low noise and comes with a variety of packages options.

Application Field

The MJ11015G is a versatile NPN bipolar silicon transistor and can be used in a number of applications including Amplifiers, computing and switching applications. It is well suited for amplifier circuits as it has high current gain and collector storage. It is suitable for switching applications as it has low noise and speed. It is ideal for low frequency applications such as relays and security systems.

Working Principle and Structure

The MJ11015G is an NPN bipolar silicon transistor that has three terminals, the base (B), the collector (C) and the emitter (E). When a positive voltage is applied to the base, a current is induced between the collector and emitter, inverting the input signal. This type of transistor is also known as a common-base amplifier.

The general structure of the MJ11015G is a three layer, NPN Silicon structure. The base layer is made from heavily doped doping silicon, which is the most heavily doped material in the transistor. The collector layer is the lightly doped region of the transistor. Finally, the emitter layer is the lightly doped region in between the base and collector layers.

Performance

The MJ11015G has a hFE range of 80-150 and an operating current of 0.25A at 5V. The forward current transfer ratio (IC/IB) is 20-50. The breakdown voltage is 75V with a maximum applied voltage of 80V. The MJ11015G can handle a maximum collector current of 1A and is rated for switching applications up to a frequency of 50KHz.

Package Options

The MJ11015G is available in several package styles–TO-220, SOT-223, SOP-8 and SOT-89. These packages are designed to optimise heat dissipation, as well as provide minimum size and maximum performance in tight spaces.

Advantages

The MJ11015G is a popular choice for amplifier circuit and switching applications due to its high current gain and low Noise performance. It is also very easy to use and can be used in a variety of applications. Additionally, the MJ11015G comes in a variety of packages and can be used in tight spaces.

Conclusion

The MJ11015G is a medium power NPN silicon bipolar transistor that is popular for switching and amplifier circuit applications. It has high current gain, collector current storage, speed and low noise performance. The MJ11015G can be used in a variety of applications and is available in a variety of packages.

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