MJ11032 Allicdata Electronics
Allicdata Part #:

MJ11032OS-ND

Manufacturer Part#:

MJ11032

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 120V 50A TO3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 120V 50A...
DataSheet: MJ11032 datasheetMJ11032 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Power - Max: 300W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-3
Description

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The MJ11032 is a single bipolar junction transistor (BJT). It is mainly used in signal amplification and signal switching circuits. Compared with discrete components, it has most of the advantages inherent in integrated components, smaller size, lower cost, higher reliability and better power handling.

The MJ11032 is offered in many different types that lead to a wide range of applications. It is designed for use with power relay switches and can also be employed for crystal radio applications. Additionally, it can be used in amplifier circuits, which require low noise levels and good signal-to-noise ratios. This device is also commonly used in many electronic control systems.

To understand the working principle of the MJ11032, it is important to understand the basic operation of a bipolar junction transistor (BJT). BJTs are three terminal devices that use the flow of a controlled current through two tightly coupled diodes to produce an amplified current between two other terminals. The current flow through the base terminal is used to control the flow of current between the emitter and the collector. When a voltage is applied between two of the three terminals, the third terminal is used to control the current flow between the other two.

The MJ11032 is a PNP BJT, which means that it has the collector and the emitter transistors supplied with positive voltages, while the base terminal supplies the negative voltage. When the negative voltage is applied at the base terminal, a current is allowed to flow from the emitter to the collector as the base voltage quickly drops. This in turn will turn the transistor on and result in the initial current that is required to flow through the transistor.

When the correct base voltage is applied, it creates an electric field that controls the current flow from the emitter to the collector. This current is referred to as Ic, and increases exponentially with the base current Ib. The ratio Ib/Ic is referred to as the current gain and is typically greater than one in MJ11032 type transistors. The higher the current gain, the more efficient the device is thought to be.

In practical applications, two methods are primarily used to drive the MJ11032. The most common is the monolithic driver responsible for controlling the current flow, while the other method is an external driver circuit. When using the external driver circuit, an integrated circuit (IC) is used to amplify the input signal strength and then send it to the emitter terminal, which controls the current flow through the transistor.

Another important component of the MJ11032 is the base resistance RB, which is linked to the base terminal. This component serves to reduce the amount of current flowing from the base from the input signal, and at the same time, it limits the rise and fall times of the output voltage swing of the transistor. It acts in the same manner as a voltage divider, setting the voltage at a particular point and thus controlling the current flow.

When the input signal and output load are connected, the MJ11032 acts as a current amplifier and the output voltage swing is modulated by the input signal. The gain of the MJ11032 is mainly determined by the base emitter voltage Vbe, collector emitter voltage Vce, base current Ibb, and the base resistor RB.

In conclusion, the MJ11032 is a single bipolar junction transistor (BJT). Its wide range of applications include oscillators, amplifier circuits, and electronic control systems. Its working principle is based on the flow of a controlled current between two tightly coupled diodes producing an amplified current at the two other terminals. This current is referred to as Ic, and increases significantly with the base current Ib. The two most common methods used to drive the MJ11032 are a monolithic driver, and an external driver circuit. Overall, the MJ11032 is a reliable and versatile device which is used in many different applications.

The specific data is subject to PDF, and the above content is for reference

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