MJ11033G Allicdata Electronics
Allicdata Part #:

MJ11033GOS-ND

Manufacturer Part#:

MJ11033G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 120V 50A TO3
More Detail: Bipolar (BJT) Transistor PNP - Darlington 120V 50A...
DataSheet: MJ11033G datasheetMJ11033G Datasheet/PDF
Quantity: 394
Stock 394Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Power - Max: 300W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-3
Description

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MJ11033G is a -25 V, 1 A NPN high-voltage and high-current switching transistor from STMicroelectronics, which is ideal for a variety of high-power applications. It is a type of Bipolar Transistor, specifically a Single Transistor, meaning it is composed of three layers of alternating P and N type semiconductors.

In terms of application fields, the MJ11033G is primarily used in industrial, home appliance, and lighting control. For example, it is frequently employed in the motor driving of enthusiasts and models, and can be added to the dimmer wires of street and area lighting systems. In addition, it also enjoys application in inductive rather than conventional motors and in high efficiency switching regulators.

In terms of working principle, the MJ11033G operates relying on a basic physics phenomenon - diffusion current. Its circuitry consists of an NPN Bipolar Transistor designed with three pins: an emitter, a collector, and a base. At the level of the individual pins, diffuse outsides compounds such as electrons, holes, and electron-hole pairs from the junction. This effect establishes a pathway of current from the collector to the emitter and through a series of cascading events allows for either the on-state or off-state of the transistor.

Regarding the off-state of the MJ11033G, the on-state voltage is +25 V, the collector emission current Ic is 10mA, and the collector maximum temperature is 125°C. For the on-state, the saturation voltage is between 0.2 V and 0.35 V, the collector-emitter voltage becomes almost zero and the maximum collector current is 1 A.

To sum up, the MJ11033G is an NPN transistor classified in the Single Bipolar (BJT) Transistors group and its primary application field is high-power and high-voltage circuits such as industrial, lighting, and home appliance control. Its inner circuitry works based off of the principle of diffusion current, where the off-state has +25 V on-state voltage, 10mA collector emission current, and 125°C connected temperature, and the on-state has 0.2-0.35 V saturation voltage, zero collector-emitter voltage, and 1 A collector current.

The specific data is subject to PDF, and the above content is for reference

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