MJ11028G Allicdata Electronics
Allicdata Part #:

MJ11028GOS-NDOS-ND

Manufacturer Part#:

MJ11028G

Price: $ 6.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 60V 50A TO3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 50A ...
DataSheet: MJ11028G datasheetMJ11028G Datasheet/PDF
Quantity: 2439
1 +: $ 6.07950
10 +: $ 5.89712
100 +: $ 5.77553
1000 +: $ 5.65393
10000 +: $ 5.47155
Stock 2439Can Ship Immediately
$ 6.08
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Power - Max: 300W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-3
Description

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A MJ11028G is a single bipolar (BJT) transistor in the TO-220 package. It is known as a metal-oxide semiconductor field-effect transistor (MOSFET) and is the most widely used device of its type.

The MJ11028G is designed for robust switching and load-pulling applications such as motor control, D/A conversion, and low-noise amplifiers. It is also used as a power amplifier in industrial and consumer electronics. A good example of its application is in the automotive industry, where it is used to power computerized car engines.

The MJ11028G operates as a voltage-controlled device, with a gate-to-source voltage controlling its switching action. This is different from a traditional BJT because its voltage control input is applied across its gate-to-source pins. As a voltage is applied between the gate and source pins, electrons are repelled away from the source, allowing them to escape through the device’s drain-to-source channel, thus generating a current through the device.

The MJ11028G is designed for use as a switch. It is used to control the flow of current between two devices, such as between a voltage source and a load. The transistor can be used to turn a specific device on or off, depending on its current level. In order to accomplish this, the input voltage applied to the gate of the device must exceed a certain threshold. When this threshold is exceeded, the MOSFET acts like a closed switch, allowing current to flow from the source to the drain. Conversely, when the applied voltage is below the threshold, the switch is an open one and no current will flow.

The MJ11028G is also well-suited for use in low-noise amplifiers because of its high switching speed and high input impedance. This makes it ideal for applications such as signal conditioning and signal filtering. Its high input impedance permits a higher effective signal-to-noise ratio, resulting in better audio fidelity. Additionally, the device’s high gain makes it well-suited for use in analog-to-digital conversion applications.

In conclusion, the MJ11028G is an effective and reliable single bipolar (BJT) transistor well-suited for switching, load-pulling, and low-noise amplifier applications. Its high-gain characteristics make it great for signal conditioning and signal filtering, while its high input impedance allows for higher audible signal-to-noise ratios. With its robust design and reliable operation, it is sure to deliver excellent results in any application.

The specific data is subject to PDF, and the above content is for reference

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