Allicdata Part #: | MJ11022GOS-ND |
Manufacturer Part#: |
MJ11022G |
Price: | $ 4.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 250V 15A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 250V 15A... |
DataSheet: | MJ11022G Datasheet/PDF |
Quantity: | 158 |
1 +: | $ 4.39110 |
10 +: | $ 3.96711 |
100 +: | $ 3.28457 |
500 +: | $ 2.86015 |
1000 +: | $ 2.49110 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 3.4V @ 150mA, 15A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 10A, 5V |
Power - Max: | 175W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204 (TO-3) |
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The MJ11022G is a type of bipolar transistor, also sometimes referred to as an NPN transistor. A bipolar transistor is a semiconductor device, deriving its name from the two types of currents that it can handle; namely, electrons and holes, which can be referred to as bipolar currents.
The MJ11022G is a single transistor, meaning that it has one active region, usually referred to as the emitter, and two contact regions, usually referred to as the base and the collector. This single transistor is capable of switching far larger currents than are achievable with a single diode. This ability makes it a great choice for the vast array of applications requiring effective current control and amplification.
These MJ11022G transistors have a number of different characteristics which make them ideal for use in a variety of applications. For instance, their low emitter-base voltage requirement and high collector current gain make them well suited to use as a switch or amplifier in a variety of applications. In addition, their low noise and high current acceptance levels make them ideal for applications where current control or current amplification is a primary consideration.
The working principle of the MJ11022G transistor is quite simple. When the base voltage is positive relative to the emitter voltage, it stimulates the electron flow through the base-emitter junction. This electron flow induces a current flow from the collector to the emitter, i.e., from the negative terminal to the positive terminal. The current flow from the collector to the emitter is limited to the base current, as the current gain of the transistor is determined by the ratio of collector current to base current.
The MJ11022G can be used in a variety of different applications such as in LED light sources, linear/current/temperature regulators, sound systems, and various types of amplifiers. It is also commonly used in the field of telecommunications, where it is ideal for power amplification of cellular signals. In addition, these transistors can be used in the field of robotics, where they can be used to control the speed of a motor or to switch relays.
Overall, the MJ11022G transistor is a great choice for a variety of applications requiring current control or amplification. Thanks to its low noise, high current acceptance, and low emitter-base voltage requirements, the MJ11022G is a highly efficient and reliable transistor for any application.
The specific data is subject to PDF, and the above content is for reference
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MJ1102FE-R52 | Ohmite | 0.01 $ | 1000 | RES 11K OHM 1/8W 1% AXIAL... |
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MJ1130FE-R52 | Ohmite | 0.01 $ | 1000 | RES 113 OHM 1/8W 1% AXIAL... |
MJ1131FE-R52 | Ohmite | 0.01 $ | 1000 | RES 1.13K OHM 1/8W 1% AXI... |
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