MJ11030 Allicdata Electronics
Allicdata Part #:

MJ11030-ND

Manufacturer Part#:

MJ11030

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 90V 50A TO-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 90V 50A ...
DataSheet: MJ11030 datasheetMJ11030 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Power - Max: 300W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-3
Description

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The MJ11030 is a type of bipolar junction transistor (BJT) which belongs to the single-transistor category. It is one of the most common and widely used BJT for many different applications, such as amplifying or switching digital signals or voltage.

Due to its wide range of characteristics, the MJ11030 is suitable for some specific tasks. Firstly, it is a great option for kinds of power amplifier circuits. It could operate with a much higher voltage than many other transistors, allowing it to build electric equipment with more power. With its better performance, MJ11030 transistors are also known to offer higher efficiency and a lower distortion rate when used for audio amplifying, making it one of the most popular transistors for audio amplifiers. Moreover, its features also make it well suited for general purpose switching applications.

To explain precisely why the MJ11030 can be so applicable in many fields, firstly let’s go through its core feature, the BJT’s working principle. A BJT is a kind of three-terminal electronic semiconductor components, with an emitter, a base, and a collector. By applying a going saturation current between the emitter and the base, the common BJT can be used as an amplifier or switch. The current flowing between the emitter and base will be manipulated by the electric field generated in the base region. Inside BJT, the collector-base junction is always the reverse-biased one, which means when a small signal voltage is applied in the base, the large collector current would be generated. Depending on the signal voltage, the BJT can be tuned to adjust the collector current. This is why the BJT could be applied for many different range of applications.

In conclusion, the MJ11030 is a type of BJT and belongs to the single-transistor category. It is a versatile way to switch or amplifying with its reverse-biased junction and power voltage handling. The desirable features of the MJ11030 make it suitable for various purposes, from general-purpose switching to power amplifying.

The specific data is subject to PDF, and the above content is for reference

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