MJ11030G Allicdata Electronics
Allicdata Part #:

MJ11030G-ND

Manufacturer Part#:

MJ11030G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 90V 50A TO-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 90V 50A ...
DataSheet: MJ11030G datasheetMJ11030G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Power - Max: 300W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-3
Description

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The MJ11030G is a single bipolar junction transistor (BJT) which is designed for medium to high power applications. It features an integrated and efficient power control circuit, making it ideal for applications such as DC-DC converters and motor drives.

The MJ11030G is a PNP device with a current gain (beta) of up to 1000. It is designed for a wide range of frequencies, up to 200kHz for a maximum collector current of 20A.

The MJ11030G is an ideal choice for applications that require a high level of efficiency and power control. It can be used in a variety of applications, ranging from industrial motor drives and solar cell inverters to LED lighting and portable computing.

The MJ11030G is used in DC-DC converters because of its high gain, low saturation voltage characteristics, and excellent power handling capabilities. It has a greater power handling capability than other similar transistors, which makes it an ideal choice for high voltage applications such as motor drives and motor regulators.

The MJ11030G is also well-suited for modulation systems, such as PWM (pulse width modulation) and PFM (pulse frequency modulation). It can be used in a variety of DC-DC topologies, such as full wave rectification, half wave rectification, and isolated full bridge rectification.

The MJ11030G features an integrated control circuit which enables it to accurately and precisely control switching cycles. This feature allows for faster response times and better efficiency than similar transistors. It also has a wide range of input capabilities, ranging from 9V to 500V.

In addition, the MJ11030G is designed with a low temperature coefficient, meaning it is capable of operating at temperatures of up to 150°C (302°F). This makes it ideal for applications that run in extreme temperatures.

Overall, the MJ11030G is an excellent choice for a wide range of applications requiring medium to high power control. Its efficient design, low saturation voltage characteristics, and wide range of input capabilities make it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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