MJD3055TF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	8V @ 3.3A, 10A
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 4A, 4V
Power - Max:	1.75W
Frequency - Transition:	2MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Base Part Number:	MJD3055

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Introduction to MJD3055TFMJD3055TF is a type of bipolar junction transistor (BJT) which belongs to the family of single transistors. It is a NPN transistor and manufactured using planar technology. This transistor is primarily intended for general-purpose amplifier applications, such as high-power audio amplifiers and linear power amplifiers.The transistor uses a high voltage system and is capable of handling a maximum collector-emitter voltage of up to 600V. It is capable of operating up to a frequency of 1.2 MHz. The device also has a typical collector current of 1A. It has a minimum gain of 60 dB and a maximum collector power dissipation of about 120 watts at full power.Technical Parameters of MJD3055TFThe technical parameters of MJD3055TF include a collector-emitter voltage of up to 600V, a maximum working frequency of 1.2 MHz, a collector current of 1A, a minimum gain of 60 dB, and a maximum collector power dissipation of up to 120 watts. The transistor is capable of operating up to 50°C ambient temperature and a maximum power dissipation of up to 150 watts. Its maximum junction temperature is up to 175 °C.MJD3055TF Application Field MJD3055TF transistors are widely used in high power audio amplifiers. They are also used in linear power amplifiers, operational amplifiers (op-amps) and other general-purpose amplification applications.The transistors can be used as building blocks in audio systems, including home hi-fi systems, amplifiers, record players, and other audio products. The transistors are also used in RF amplifiers and other applications requiring high-power and high-voltage amplification.MJD3055TF Working Principle The working principle of a bipolar junction transistor (BJT) is based on the flow of electric current through the device. The transistor consists of three layers: base, emitter and collector.The base of the transistor acts as a gate which controls the flow of current through the device. When a small current is passed through the base, it creates an electric field which controls the current flow.When the current passes through the device, it is amplified and the output current is greater than the input current. The collector and emitter are responsible for transferring the multiplied current signal to the external circuits.The output current can be controlled by changing the base voltage and the collector-emitter voltage. By changing these parameters, different gains can be obtained in different applications.Conclusion MJD3055TF is a type of bipolar junction transistor (BJT) which belongs to the family of single transistors. It is primarily used for general-purpose amplifier applications, such as high-power audio amplifiers and linear power amplifiers.The transistor uses a high voltage system and is capable of handling a maximum collector-emitter voltage of up to 600V. The device also has a typical collector current of 1A and a minimum gain of 60 dB.The transistor can be used in applications requiring high-power and high-voltage amplification, such as RF amplifiers and audio systems. The working principle of a bipolar junction transistor is based on the flow of electric current through the device. By changing the base voltage and the collector-emitter voltage, different gains can be obtained.

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