MJD340T4G Allicdata Electronics
Allicdata Part #:

MJD340T4GOSTR-ND

Manufacturer Part#:

MJD340T4G

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.5A DPAK
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 10MHz 1.56...
DataSheet: MJD340T4G datasheetMJD340T4G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.12909
5000 +: $ 0.12076
12500 +: $ 0.11243
25000 +: $ 0.11104
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1.56W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD340
Description

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MJD340T4G Application Field and Working Principle

MJD340T4G is a type of bipolar Junction Transistor (BJT). It is particularly designed for low saturation voltage of medium-power application and comprises of 2 transistors. Specifically, MJD340T4G is a single-diffused medium-power used for amplifier and switch applications. It is suitable for high-voltage batteries, power supplies and HVAC circuits. BJTs are composed of three sections, each with different functionality. These are the base, collector, and emitter. Both the base and the collector are used to control the flow of the current, with the emitter being the path through which the current is allowed to flow. The Collector-Emitter (CE) is the point where BJTs are powered, while the Base-Emitter (BE) is where the transistor\'s potential difference is created.The BJT in the MJD340T4G is designed so that it can operate up to the output power of 175W, at a collector-emitter voltage of 600V and a collector-emitter saturation voltage of 2.0V. This model comes with enhanced parameters for outstanding reliability and excellent switching performance.MJD340T4G can be used for a variety of applications. Its high power dissipation makes it ideal for HVAC circuits, power supplies and consumer appliances. Additionally, it proves to be a cost-effective and efficient solution for any power system design. The main purpose of the MJD340T4G is to amplify or switch an electrical signal. Transistors are semiconductor devices, meaning they are constructed of material, such as germanium (Ge), or silicon (Si). They conduct electricity when charged, and when triggered by a signal, they can turn the current on or off. In order to work effectively, the BJT needs to be properly biased. Bias is the ability to maintain a steady current in a circuit. This is done by ensuring that the base current, the collector current, and the emitter current are all in balance. When properly biased, a transistor can amplify the current from the source to the load.To summarize, the MJD340T4G is a single-diffused medium-power Transistor with enhanced parameters that provides reliable performance at up to 175W of output power. It is used in a variety of applications such as power supplies and HVAC circuits. Finally, these BJTs require a certain amount of bias in order to operate correctly.

The specific data is subject to PDF, and the above content is for reference

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