Allicdata Part #: | MJD340T4GOSTR-ND |
Manufacturer Part#: |
MJD340T4G |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.5A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 300V 500mA 10MHz 1.56... |
DataSheet: | MJD340T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.12909 |
5000 +: | $ 0.12076 |
12500 +: | $ 0.11243 |
25000 +: | $ 0.11104 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 1.56W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD340 |
Description
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MJD340T4G Application Field and Working Principle
MJD340T4G is a type of bipolar Junction Transistor (BJT). It is particularly designed for low saturation voltage of medium-power application and comprises of 2 transistors. Specifically, MJD340T4G is a single-diffused medium-power used for amplifier and switch applications. It is suitable for high-voltage batteries, power supplies and HVAC circuits. BJTs are composed of three sections, each with different functionality. These are the base, collector, and emitter. Both the base and the collector are used to control the flow of the current, with the emitter being the path through which the current is allowed to flow. The Collector-Emitter (CE) is the point where BJTs are powered, while the Base-Emitter (BE) is where the transistor\'s potential difference is created.The BJT in the MJD340T4G is designed so that it can operate up to the output power of 175W, at a collector-emitter voltage of 600V and a collector-emitter saturation voltage of 2.0V. This model comes with enhanced parameters for outstanding reliability and excellent switching performance.MJD340T4G can be used for a variety of applications. Its high power dissipation makes it ideal for HVAC circuits, power supplies and consumer appliances. Additionally, it proves to be a cost-effective and efficient solution for any power system design. The main purpose of the MJD340T4G is to amplify or switch an electrical signal. Transistors are semiconductor devices, meaning they are constructed of material, such as germanium (Ge), or silicon (Si). They conduct electricity when charged, and when triggered by a signal, they can turn the current on or off. In order to work effectively, the BJT needs to be properly biased. Bias is the ability to maintain a steady current in a circuit. This is done by ensuring that the base current, the collector current, and the emitter current are all in balance. When properly biased, a transistor can amplify the current from the source to the load.To summarize, the MJD340T4G is a single-diffused medium-power Transistor with enhanced parameters that provides reliable performance at up to 175W of output power. It is used in a variety of applications such as power supplies and HVAC circuits. Finally, these BJTs require a certain amount of bias in order to operate correctly.The specific data is subject to PDF, and the above content is for reference
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