MJD32CG Allicdata Electronics
Allicdata Part #:

MJD32CGOS-ND

Manufacturer Part#:

MJD32CG

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 3A DPAK
More Detail: Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Su...
DataSheet: MJD32CG datasheetMJD32CG Datasheet/PDF
Quantity: 2233
1 +: $ 0.34000
10 +: $ 0.32980
100 +: $ 0.32300
1000 +: $ 0.31620
10000 +: $ 0.30600
Stock 2233Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD32
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MJD32CG is a type of bipolar junction transistors (BJTs calls it) that the commercial units of it are current gain bandwidth product (fT) reach 640MHz with a potential fast switching speed. As the technology advances, its manufacturing process has been changing over the years and allow us to adjust the parameters to its highest optimized value.

Application fields:

  • Proximity sensing in security systems
  • Video output
  • CMOS logic
  • High-frequency switching
  • Inductive sensing
  • Power supply sequencing
  • Level detection

For the new MJD32CG, its high gain-bandwidth product and high current-gain make it widely used in switching and driver configuration while working with small and medium power applications. In power switching applications, it can be applied as electronic load switch or electronic relay application.

Working principle:

The MJD32CG consists of two BJTs (one N-type, one P-type) combined in a three-terminal design. As its name suggests, the MJD32CG is a complementary pair device that works with both NPN and PNP transistor components. Its operations are similar to ordinary NPN-PNP transistor pairs but have demonstrated superior performance.

Similar to other BJTs, the MJD32CG has a base, collector and emitter. The base is controlling the flow of current form collector to emitter and thus the operations of MJD32CG transistor. An electrical signal from the base will control the current flow and decide whether the MJD32CG turns on or off. Depending device’s biasing method and configuration, it can be used as an amplifier or a switch.

When used as an amplifier, the input signal is applied to the base of the transistor and it will enable the necessary current to flow through the collector and emitter. This current then amplifies the output signal by creating a larger current. When used as a switch, the input signal will control the gates and will cause the transistor to change its state from off to on and vice versa.

Due to the high gain-bandwidth product, the MJD32CG transistor can handle high frequency signals, making it suitable for high-frequency switching applications. It can also be used for level detection, inductive sensing and other applications due to its excellent performance.

In summary, the MJD32CG is a type bipolar junction transistor (BJT) with a high gain-bandwidth product and excellent performance. Its operations are similar to ordinary NPN-PNP transistor pairs, but the MJD32CG has demonstrated better performance. Its wide range of application is mainly within high-frequency switching and small- medium power applications and is compatible with power supply sequencing, inductive sensing, proximity sensing and CMOS logic.

The specific data is subject to PDF, and the above content is for reference

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