
Allicdata Part #: | MJD32CGOS-ND |
Manufacturer Part#: |
MJD32CG |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Su... |
DataSheet: | ![]() |
Quantity: | 2233 |
1 +: | $ 0.34000 |
10 +: | $ 0.32980 |
100 +: | $ 0.32300 |
1000 +: | $ 0.31620 |
10000 +: | $ 0.30600 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD32 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MJD32CG is a type of bipolar junction transistors (BJTs calls it) that the commercial units of it are current gain bandwidth product (fT) reach 640MHz with a potential fast switching speed. As the technology advances, its manufacturing process has been changing over the years and allow us to adjust the parameters to its highest optimized value.
Application fields:
- Proximity sensing in security systems
- Video output
- CMOS logic
- High-frequency switching
- Inductive sensing
- Power supply sequencing
- Level detection
For the new MJD32CG, its high gain-bandwidth product and high current-gain make it widely used in switching and driver configuration while working with small and medium power applications. In power switching applications, it can be applied as electronic load switch or electronic relay application.
Working principle:
The MJD32CG consists of two BJTs (one N-type, one P-type) combined in a three-terminal design. As its name suggests, the MJD32CG is a complementary pair device that works with both NPN and PNP transistor components. Its operations are similar to ordinary NPN-PNP transistor pairs but have demonstrated superior performance.
Similar to other BJTs, the MJD32CG has a base, collector and emitter. The base is controlling the flow of current form collector to emitter and thus the operations of MJD32CG transistor. An electrical signal from the base will control the current flow and decide whether the MJD32CG turns on or off. Depending device’s biasing method and configuration, it can be used as an amplifier or a switch.
When used as an amplifier, the input signal is applied to the base of the transistor and it will enable the necessary current to flow through the collector and emitter. This current then amplifies the output signal by creating a larger current. When used as a switch, the input signal will control the gates and will cause the transistor to change its state from off to on and vice versa.
Due to the high gain-bandwidth product, the MJD32CG transistor can handle high frequency signals, making it suitable for high-frequency switching applications. It can also be used for level detection, inductive sensing and other applications due to its excellent performance.
In summary, the MJD32CG is a type bipolar junction transistor (BJT) with a high gain-bandwidth product and excellent performance. Its operations are similar to ordinary NPN-PNP transistor pairs, but the MJD32CG has demonstrated better performance. Its wide range of application is mainly within high-frequency switching and small- medium power applications and is compatible with power supply sequencing, inductive sensing, proximity sensing and CMOS logic.
The specific data is subject to PDF, and the above content is for reference
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