MJD31CT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-2484-2-ND |
Manufacturer Part#: |
MJD31CT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 100V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 15W Surface ... |
DataSheet: | MJD31CT4 Datasheet/PDF |
Quantity: | 7500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 15W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD31C |
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The MJD31CT4 is a power transistor that is part of the family of single bipolar junction transistors. It is designed for use in high temperature and high voltage applications and is capable of providing a maximum collector-emitter voltage of 600V and an average DC collector current of 6A. The transistor has an operating temperature range of -55°C to 175°C.
The MJD31CT4 is a three-terminal device that can be used as a switch or amplifier. It consists of a base, emitter and collector terminal, as well as a low-impedance structure to minimize the potential of thermal runaway and to reduce power dissipation. The transistor has a package rating of 30W at a temperature of 25°C.
The MJD31CT4 is suitable for use in applications such as power switching, switching regulators, general purpose inverters, power amplifiers and power transistors. Additionally, it can be used in a variety of specialized equipment, such as battery charging equipment, industrial motors and welding equipment.
The working principle of the MJD31CT4 is based on the fact that the current flow through the collector-emitter junction is proportional to the voltage applied to the base-emitter junction. This current flow is regulated by a P-N junction diode, which when reverse biased creates a depletion layer that is capable of blocking current flow. When a voltage is applied to the base, the depletion layer shrinks, allowing current to flow to the collector, allowing the transistor to switch on and off.
When the transistor is in the on-state, current can flow from the collector to the emitter and the transistor will remain in the on-state until the current through the collector drops below the holding current. This holding current is necessary to prevent the transistor from switching off while current is flowing through it.
The MJD31CT4 is a versatile power transistor that can be used in a variety of applications where high temperature, high voltage and high current capability is needed. It is capable of handling a wide range of currents and voltages, making it suitable for a variety of applications in both industrial and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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