MJD340G Allicdata Electronics
Allicdata Part #:

MJD340GOS-ND

Manufacturer Part#:

MJD340G

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.5A DPAK
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 10MHz 1.56...
DataSheet: MJD340G datasheetMJD340G Datasheet/PDF
Quantity: 2925
1 +: $ 0.35910
10 +: $ 0.30870
100 +: $ 0.23058
500 +: $ 0.18119
1000 +: $ 0.14001
Stock 2925Can Ship Immediately
$ 0.4
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1.56W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD340
Description

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MJD340G is a type of bipolar junction transistor (known as a BJT) designed for switching and amplification applications. It has an SOT-323 package, 4V-20mA continuous collector current capability, and a wide frequency range of up to 150MHz. The MJD340G has low collector-emitter saturation voltage, high current gain, and fast switching speeds which make it ideal for signal and power applications.

The MJD340G can be used in amplifiers, switching regulators, converters, signal transducers, and more. It is used to amplify AC and DC signals and switch power supplies on and off. It is also used in transistor arrays and amplifier circuits. The MJD340G can be used to regulate the voltage, current, or power in various types of circuits.

The MJD340G works in several ways. The first way is by creating an depletion current area in the base-collector region and an enhancement current area in the second base-collector region when a potential difference is applied between the base and the collector. This creates a transistor action between the base and collector regions. The second way is by using the base-emitter region to control the collector current. The current flow from the emitter to the collector is controlled by the voltage applied across the base-emitter region. With a higher voltage applied across the base-emitter region, the collector current will increase. With a lower voltage applied across the base-emitter region, the collector current will decrease.

The two currents in the base-collector region, the depletion and the enhancement current, are referred to as the common- to differential and the common-mode currents. The common-mode current is determined by the voltage applied to the base-collector region. The differential current is determined by the voltage applied to the second base-collector region. The two currents interact to create a transistor action between the collector and base regions. The transistor action creates the gain of the transistor.

The MJD340G has several advantages over other transistors. It has a low-voltage, high-current gain, fast switching speed, and low collector-emitter saturation voltage. Its low voltage enables it to be used in low voltage, high current applications. Its fast switching speed also makes it ideal for high frequency applications. Its low collector-emitter saturation voltage makes it suitable for use in low-voltage applications.

The MJD340G is an ideal choice for amplifying and switching applications. Its wide frequency range, low voltage and current gain, and fast switching speed make it ideal for digital and analog applications. Its low collector-emitter saturation voltage makes it suitable for use in low-voltage applications. It is also used in transistor arrays and amplifier circuits. The MJD340G is a versatile and reliable transistor for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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