MJD350-13 Discrete Semiconductor Products |
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Allicdata Part #: | MJD350-13DITR-ND |
Manufacturer Part#: |
MJD350-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 300V 0.5A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 300V 500mA 15W Surfa... |
DataSheet: | MJD350-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 15W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD350 |
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The MJD350-13 is a type of single bipolar transistor (BJT) that can be used across a wide range of applications. This transistor is known for its relatively high current gain and low voltage drop. It is also very reliable in long-term operation, as well as being highly resistant to environmental influences.
The value of the current gain (hFE) is from 150 to 400 and the maximum gain bandwidth (fT) is from 15 to 25 MHz. The TJ max temperature of this device is up to 175°C, making it suitable for operation in higher temperature environments. The cutoff frequency is up to 160 MHz, making it well suited for high speed switching applications.
The maximum operating voltage VR is up to 30V and the maximum collector current IC max is up to 10A. The total power dissipation (PD) is up to 30W. The maximum collector-emitter breakdown voltage (BVCEO) is 30V.
This device is usually used in the Darlington configuration. This enables two transistors to cooperatively amplify signals and produce higher current gains than a single transistor of the same type. The Darlington configuration is often used in audio amplifiers, voltage followers and other applications where a low input bias current is desired.
The working principle for the MJD350-13 is the same as for other common transistors. The base-emitter junction has a relatively high reverse bias voltage due to the doping and doping concentration. When current is applied to the base, it causes a significant rise in the internal base-emitter junction current. This in turn produces a large increase in the collector current. The large collector current can be used to power another device or perform other tasks.
In addition, the device has its own saturation characteristics that are determined by its size, shape and material composition. When its collector-emitter voltage exceeds a certain level, the device saturates and the collector current drops sharply. This effect can be used to turn an amplifier circuit on and off. The reverse bias voltage of the base-emitter junction can also be used to control the amount of current that is allowed through the device.
The MJD350-13 is an effective and reliable device that can be used in a wide variety of applications, including audio amplifiers, voltage followers, digital logic gates and other circuits. Its high current gain and low voltage drop make it a great choice for many applications. Its saturation characteristics also make it an ideal choice for controlling the amount of current that is allowed through the device.
The specific data is subject to PDF, and the above content is for reference
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