Allicdata Part #: | MJD31CTF_SBDD001A-ND |
Manufacturer Part#: |
MJD31CTF_SBDD001A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Su... |
DataSheet: | MJD31CTF_SBDD001A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Base Part Number: | MJD31 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MJD31CTF_SBDD001A is a single bipolar transistors (BJT) that offers many advantages over traditional transistors. This device is designed to provide superior performance in a wide range of applications, including communication, consumer electronics, and computing applications.
The MJD31CTF_SBDD001A offers two major advantages over traditional transistors: improved power efficiency and more switching speed. These features make the MJD31CTF_SBDD001A especially suitable for high-speed applications, such as routers and switches. The device also offers a very low power consumption and a wide range of on-state voltages, making it ideal for low-power, low-voltage applications.
The MJD31CTF_SBDD001A works by using hot carrier injection technology, which enables the transistor to reach higher speeds than traditional transistors. The process involves the transistor’s base current which is modulated by the collector and emitter voltage. This modulation creates the injection of carriers that reach higher speeds, and thus increase the power efficiency. The device also has a high switching speed, which enables it to perform faster than conventional transistors.
The MJD31CTF_SBDD001A also offers enhanced performance in terms of reliability and temperature coefficient. This device is designed to be more reliable over time, in that it operates at a higher temperature coefficient, which allows for a greater temperature range. As a result, it can be used in a wide range of applications that need to run at higher temperatures.
In addition, the MJD31CTF_SBDD001A has a high current gain and current capacity, which allows it to operate in higher power applications. Furthermore, the device has a low noise level, with a noise figure below 0.1dB. This makes the device suitable for low noise applications and those with stringent noise requirements.
Overall, the MJD31CTF_SBDD001A is a powerful, reliable and efficient single bipolar transistors (BJT) device. It has a wide range of applications, including communication, consumer electronics and computing applications. Its high power efficiency, low power consumption, and increased switching speeds make it a great choice for high-speed applications. In addition, its high current gain, current capacity and low noise figure make it an excellent choice for low power and low noise applications.
The specific data is subject to PDF, and the above content is for reference
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