MJD31T4G Discrete Semiconductor Products |
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Allicdata Part #: | MJD31T4GOSTR-ND |
Manufacturer Part#: |
MJD31T4G |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Sur... |
DataSheet: | MJD31T4G Datasheet/PDF |
Quantity: | 5000 |
2500 +: | $ 0.11863 |
5000 +: | $ 0.11098 |
12500 +: | $ 0.10332 |
25000 +: | $ 0.10205 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD31 |
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MJD31T4G is a type of bipolar transistor (BJT) and comes under the category of single transistors. A bipolar transistor is a type of semiconductor device that enables current in two directions. It is made up of three terminals; the two terminal being connected to the base and the other two being commonly connected to the collector and the emitter. It consists of two semiconductor layers; one is P-type material and the other is N-type material. The P-type layer is called the base, while the N-type layer is referred to as the emitter and collector. It can be used to amplify voltages, currents, or power.
The MJD31T4G has a wide range of uses in different areas of electronics. It is often used in voltage regulators and amplifiers due to its low cost and efficiency. It also finds applications in medical equipment, telecommunications, and automotive applications. It is also used in power controllers as it has a higher current capability than other bipolar transistors.
The working principle of the MJD31T4G is relatively simple. It takes the input voltage and passes it through the two semiconductor layers. When the input voltage is applied across the base and collector terminals, some of the electrons from the P-type material (the base) cross the N-type material to the collector terminal. This results in hole current (the number of holes in the N-type material increases). This hole current is proportional to the base-emitter current.
The power transferred to the collector is controlled by the input voltage given to the base. The greater the input voltage, the more electrons will cross over to the collector, resulting in an increase in the power transferred. The MJD31T4G can be used in a variety of applications such as AC/DC converters and DC/DC converters for switching applications. It can also be used to amplify signal amplifiers and audio amplifiers. It has various features such as low noise, low saturation voltage and high switching speeds. Additionally, it has low energy consumption, making it an ideal solution for battery powered applications.
In conclusion, the MJD31T4G is a single bipolar transistor commonly used in various applications. It has wide applications and is an ideal choice for power controllers, audio amplifiers and AC/DC converters. The working principle is relatively simple and involves passing an input voltage across the base and collector terminals. The power transferred is then controlled by this voltage, resulting in an increase in current capability and power.
The specific data is subject to PDF, and the above content is for reference
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