Allicdata Part #: | MJD350GOS-ND |
Manufacturer Part#: |
MJD350G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.5A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 300V 500mA 1.56W Sur... |
DataSheet: | MJD350G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 1.56W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD350 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MJD350G is a bipolar junction transistor (BJT) that is commonly used in power management applications, such as for amplifying audio signals. It is designed to be able to operate under very high power levels and is capable of handling significant power loads. Due to its high power rating, it is often used in high-powered audio systems as well as power amplifiers.
The MJD350G consists of two p-n junctions that are referred to as the emitter and the collector. These junctions form a base current which is then used to drive the collector current. This enables the transistor to amplify signals and regulate power levels. The base current is determined by the amount of voltage applied to the emitter and the collector of the transistor.
The operating principle of the MJD350G can be explained by looking at its structure. It consists of two layers of semiconductor material, one p-type and one n-type. The two layers meet to form the junctions which, in turn, create the necessary current paths. The voltage applied to the base of the transistor creates a base current. This base current is then passed through the emitter-collector junction and creates a collector current.
This collector current then passes through the load and is amplified.This process enables the MJD350G to regulate power levels. The power that is being amplified can be adjusted by controlling the base current. This enables the device to be used in applications that require precise power control.
The MJD350G is capable of handling very large amounts of power and is often used in power amplifiers. It is also commonly used in audio applications such as speakers and microphones. It is also used in high-powered optical light systems and is often used in medical imaging and diagnostics.
The MJD350G is a reliable and versatile bipolar junction transistor. Its ability to handle large amounts of power makes it an ideal choice for applications that require reliable, precise power regulation. Its versatility and reliability make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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