Allicdata Part #: | MJD340TFTR-ND |
Manufacturer Part#: |
MJD340TF |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.5A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 300V 500mA 1.56W Sur... |
DataSheet: | MJD340TF Datasheet/PDF |
Quantity: | 2000 |
2000 +: | $ 0.14273 |
6000 +: | $ 0.13352 |
10000 +: | $ 0.12431 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 1.56W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Base Part Number: | MJD340 |
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MJD340TF is a type of Single Bipolar Junction Transistor (BJT) that is suitable for a variety of applications. It is a NPN-type enhancement-mode transistor with fast switching time for applications such as switching, amplifier, oscillators, interface circuits, drivers and more. In power applications, it is used for high current switching to load ratings up to 50W. It has a high DC current gain, low cutoff frequency and low power dissipation that make it suitable for various high-frequency applications.The MJD340TF has three terminals, namely base, collector and emitter, which are electrically connected to the die using wire bond leads. This transistor is packaged in a TO-220 plastic package with leads that are insulated from the body. The device features integrated heat sinks, which helps to reduce power dissipation and improve thermal conductivity. The device also has suppression of transient thermal runaway (thermal shutdown) feature to protect it from thermal destruction due to excessive junction temperatures.The working principle of the MJD340TF is based on the current amplification effect of transistors. When a voltage is applied to the base terminal, an induced current flows through the emitter-base junction and controls the amount of current that will flow between the collector and emitter. This current induces a voltage in the collector-emitter circuit, also known as the output current or collector current, resulting in an amplification of the small base current.When the base voltage is increased, the increased current flow causes a greater collector current, which causes the collector-emitter voltage to drop. This process is known as saturation. When the base voltage is reduced, the collector-emitter voltage increases and the transistor goes into the active region. In this region, the collector current decreases, and the collector-emitter voltage increases. This process is known as cut-off, and occurs when the base voltage is below a certain level.The MJD340TF performs very well in applications that require high switching speeds, such as switching power supplies, inverters, and pulse converters. It is also suitable for linear and digital applications, such as oscillators, amplifiers, comparators, video buffers, and interface circuits. In high voltage applications, this device can handle up to 800V. Additionally, its low noise characteristics make it suitable in audio applications.In summary, the MJD340TF is a common NPN-type enhancement-mode transistor used in many types of applications. It features fast switching time, good DC current gain, low cutoff frequency, low power dissipation, integrated heat sinks, and suppression of transient thermal runaway (thermal shutdown). With these features, the MJD340TF is an excellent choice for applications requiring high-speed switching, such as switching power supplies, inverters, pulse converters, and various other applications.
The specific data is subject to PDF, and the above content is for reference
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