Allicdata Part #: | MJD32CT4GOSTR-ND |
Manufacturer Part#: |
MJD32CT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Su... |
DataSheet: | MJD32CT4G Datasheet/PDF |
Quantity: | 12500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD32 |
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The MJD32CT4G is a type of transistor that is a single, bipolar junction transistor (BJT). A transistor is a three-terminal semiconductor device that amplifies electrical signals or switches electrical current flow. BJTs are common in digital and analog circuits and are often used as amplifying components in integrated circuits (ICs).
The MJD32CT4G is a depletion-mode transistor, which means that it can be used to conduct or cut off current when connected to the correct power source. It is designed to operate in various modes, including switching, linear amplification, and interfacing with other electronic components. The MJD32CT4G is suitable for applications in consumer electronics, including television sets, audio systems, and other audio-visual equipment.
The MJD32CT4G is capable of operating at temperatures up to 175C and at a supply voltage of up to 80V. It also has a wide range of current gain hFE (common emitter) values, ranging from 20-400. This makes the MJD32CT4G suitable for both low- and high-power applications. The transistor also has a low input capacitance, making it suitable for high-frequency switching applications.
The MJD32CT4G uses a bipolar junction in order to amplify an electrical signal. A BJT consists of two different types of doped semiconductor material, an emitter and a collector. The emitter and collector are connected to three leads, or terminals. The base terminal is used to control the current flow between the emitter and collector. When a voltage is applied to the base terminal, it creates a small current from the collector to the emitter.
In the case of the MJD32CT4G, the voltage applied to the base terminal controls the current between the emitter and collector. This increases the current gain, allowing the transistor to amplify small signals. This is useful for switches and amplifiers that need to process low-level signals. Additionally, the MJD32CT4G can be used in logic circuits, as the number of transistors allows it to process multiple inputs to generate a single output.
The MJD32CT4G is a versatile transistor that can be used in a wide range of applications. It has a wide range of current gain hFE values, a low input capacitance, and can operate at high temperatures. This makes the MJD32CT4G suitable for switching, linear amplification, and interfacing with other electronic components. Additionally, the transistor can be used in logic circuits to process multiple inputs to generate a single output.
The specific data is subject to PDF, and the above content is for reference
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