MPSW05G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 10mA, 250mA
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 250mA, 1V
Power - Max:	1W
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)

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The MPSW05G is a type of bipolar junction transistor (BJT) specifically classified as a single transistor. Bipolar junction transistors are characterized by two types of charge carriers, giving them their bipolarity. The service area of the MPSW05G is narrow but its performance is outstanding, making the device suitable for many diverse applications. Bipolar junction transistors are used for a variety of purposes. They are often employed as amplifiers, where the current gain of the device can be used to amplify weak signals. Additionally many digital circuits will utilize BJTs, oftentimes as switches as their current gain can make them ideal for either turning circuits on or off. The current gain of the MPSW05G can range from 40 to 200, making it suitable for either of these purposes. In addition to these applications, BJTs can also be used for linear control applications, such as those found in temperature control systems or current switching. These applications can be accomplished by utilizing the transistor as a linear control device; biasing the collector current or base current and then using the transistor’s current gain to control the linearity of the output. The MPSW05G is particularly good for this purpose because of its wide current gain range and its extremely low voltage and current appetite. When understanding the working principle of the MPSW05G, it is important to understand the basic operation of a bipolar junction transistor. The MPSW05G consists of three regions or terminals; the base, collector, and emitter. The current passing through the device is controlled by the base terminal; a small current passing through the base terminal will control a larger current through the collector and emitter terminals. This is known as the current gain of the device and is the main function of the MPSW05G. In order for electricity to flow through the MPSW05G, a bias voltage must be applied to the base terminal. The magnitude of the current gain is determined by the applied tension on the base terminal. When a voltage is applied to the base terminal, minority carriers (electrons) will be attracted to the positive base. These carriers will be then drawn towards the collector terminal and will create a current flow. The current gain of the MPSW05G is determined by the ratio of the collector current to the base current, with a greater base current resulting in a lower current gain. The MPSW05G BJT is extremely versatile and can be employed in many varied applications. Its outstanding properties make it suitable for wide range of purposes, ranging from digital switches to linear control devices. Additionally, its low voltage and current appetite make it especially suitable for modern electronic designs with demanding power requirements. The MPSW05G may be a single transistor but its possibilities are certainly not limited by its form factor.

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