MPSW45A Allicdata Electronics
Allicdata Part #:

MPSW45AOS-ND

Manufacturer Part#:

MPSW45A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 50V 1A TO92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 50V 1A 1...
DataSheet: MPSW45A datasheetMPSW45A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Base Part Number: MPSW45A
Description

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The MPSW45A is a single Bipolar Junction Transistor (BJT) designed primarily for use as an amplifier or switch. It is a medium power transistor which can be used effectively in a variety of applications, including audio amplifiers, high-speed switching, linear amplifier circuits, motor control, and power supplies.

The MPSW45A is a three-terminal bipolar transistor with an emitter, a collector, and a base. The multi-purpose single-carrier NPN device has been designed with a structure to achieve high colllector-to-base voltage ratings and high current gain performance. It features a low saturation voltage, low noise level, and fast switching times. With a total power dissipation of up to 800 mW, it is perfect for use in both high-power and low-power applications.

The MPSW45A can be used for both digital and analog applications as long as the operating temperature does not exceed its maximum ratings. It has a collector-to-emitter voltage rating of 60V and a collector current rating of 800mA, making it suitable for a wide range of applications including low-frequency amplifiers, switches, and control circuits. It also features a high performance Darlington configuration with an internal emitter resistor, allowing it to provide precise current control.

In terms of its working principle, the MPSW45A is essentially a voltage-controlled current source. When a voltage is applied to the base, it increases the current flowing through the collector by proportionally lowering the resistance of the base-emitter junction. This current is then diverted to the output terminal, allowing the MPSW45A to provide precise current control. In addition, the MPSW45A also features an internal emitter resistor which helps create a negative feedback loop, providing additional stability and improved performance.

In terms of its application fields, the MPSW45A is suitable for a range of audio and switching applications. Its fast switching speed and low noise level make it ideal for use as a switch and in audio amplifiers. It can also be used in linear amps and power supplies and for motor control. Furthermore, it is capable of operating at temperatures of up to 150°C, making it suitable for use in both high-temperature and low-temperature environments.

In conclusion, the MPSW45A is a single-carrier NPN transistor designed primarily for use as an amplifier or switch. Its fast switching speed, low saturation voltage and low noise level, and high collector-to-base voltage rating make it suitable for use in a wide range of audio and switching applications, as well as in linear amps, power supplies, and motor control. Its working principle is essentially a voltage-controlled current source, allowing it to provide precise current control.

The specific data is subject to PDF, and the above content is for reference

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