Allicdata Part #: | 568-13957-ND |
Manufacturer Part#: |
MRF300BN |
Price: | $ 33.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | RF MOSFET LDMOS 50V TO247 |
More Detail: | RF Mosfet LDMOS 50V 27MHz ~ 250MHz 18.7dB 300W TO... |
DataSheet: | MRF300BN Datasheet/PDF |
Quantity: | 236 |
1 +: | $ 30.83220 |
10 +: | $ 28.76450 |
100 +: | $ 24.97510 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 27MHz ~ 250MHz |
Gain: | 18.7dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | 300W |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a well-known type of transistor mainly used in the RF (Radio Frequency) domain. The most widely used type of MOSFET is the MRF300BN. This type of MOSFET has a wide range of applications and a simple working principle, making it ideal for a range of different applications. In this article, we will discuss the application fields and working principle of the MRF300BN.
Applications of MRF300BN
The MRF300BN is a versatile transistor that can be used in a variety of applications. It is most commonly used in RF applications such as amplifiers and switches. In addition, the MRF300BN can be used in radio transmitters, mobile phones, and various radar applications. It is also used in high-frequency communication circuits and as a power device in audio applications. Moreover, the transistor is used in voltage references and power supply circuits. Due to its high speed operation, the MRF300BN is also suitable for use in clock and data transmission circuits, as well as servo-driving applications.
Working Principle of MRF300BN
The MRF300BN has a simple working principle. The MOSFET’s gate terminal is flopped between the drain and source terminal and provides a voltage switch for the transistor. When a gate bias voltage is applied, a current (Igf) flows from the gate to the source, increasing the amount of electrons in the gate, therefore creating a conducting channel between the source and the drain and allowing the current (Id) to flow from the drain to the source. The amount of the drain current (Id) is proportional to the gate current (Igf).
When the voltage beyond a certain level (Vgs or Vds), the MOSFET is called ‘saturated’, which means that the channel is wide open and the current flow is at its maximum. The drain current decreases as the applied gate voltage decreases. When the applied voltage to the gate is equal to zero, the MOSFET is called ‘off’. In this state, the current flow is zero.
Conclusion
The MRF300BN is an extremely versatile type of MOSFET, which is popularly used in a wide range of RF applications, communications, and audio applications. The working principle of the device is relatively simple and can be summarized as follows: The magnitude of the drain current (Id) is proportional to the magnitude of the gate current (Igf). When the applied gate voltage is equal to zero, the transistor is ‘off’, and when it is greater than a certain level, the transistor is ‘saturated’, signifying that the current flow is at its maximum.
The specific data is subject to PDF, and the above content is for reference
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