MRF372R5

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MRF372R5 is an N-Channel Enhancement Mode Field Effect Transistor (FET) that operates in the radio frequency (RF) range. The device is specially designed for wideband applications and is suitable for use with low noise amplifiers, broadband amplifiers, small radio communication equipment, and wideband IF amplifiers.

MRF372R5 is designed for both common source, drain and source follower configurations. Its relatively low power of 1.5 W in the frequency range of 0.1 to 500 MHz provides enough power, while preventing the device from drawing too much current. It also features a low noise figure of 2.8 dB up to 10 MHz.

The MRF372R5 transistor is equipped with a source of drain-to-source voltage (VDS) below 12V. This voltage limits the current flow in the device and allows the devices to operate at a higher frequency range. It also has a high breakdown voltage (VBR) of 20V, which prevents the occurrence of flashover. In addition, the MRF372R5 has a dielectric breakdown strength of 50V.

The primary function of the MRF372R5 transistor is to increase the gain of an amplifier by coupling a relatively high frequency signal to the drain of the transistor. The gate-source voltage (VGS) carries a signal from the amplifier, which is then amplified by the transistor. This amplification is generated by the FET’s characteristic property of transconductance. As the voltage from the amplifier increases, the current through the FET increases in proportion. The transconductance is the current gain of the device.

When the gate-source voltage (VGS) reaches its threshold voltage, the transistor begins to conduct. This point is referred to as the turn-on threshold of the FET. The gate-source voltage determines how much current flows through the FET, which is proportional to the voltage applied across the gate and source. The gate-source voltage also affects the FET’s sensitivity to external noise, which is why RF FETs are designed with low threshold voltage.

At low frequencies, the FET behaves like a large capacitor due to the Miller effect. This capacitance can affect the stability and reliability of the amplifier and the FET. To counteract this effect, the FET is fitted with extra capacitors to stabilize the circuit. This biasing helps reduce the FET’s capacitance and increase its stability. Finally, the FET has an extra capacitance, which is used to increase its high frequency stability.

The MRF372R5 is an ideal FET for radio frequency applications, thanks to its high power capability, low noise figure, and reliable operation. Its wide range of features makes it suitable for use in various applications, including broadband amplifiers and small radio communication equipment. With a properly designed circuit and proper biasing, the MRF372R5 can provide the amplification and stability needed for long-term, reliable operation of a wide variety of RF applications.

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