MRF373ALR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF373ALR1 is a laterally diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a 20 Volts Drain-to-Source Voltage (Vdss) and 9.76 Amps Continuous Drain Current (Id). It is designed for use in RF and microwave power amplifiers, amplifiers, and audio amplifiers.The operation of a MOSFET is based on a “channel” between the source and drain, which is developed by applying a gate voltage Vgs. When this gate voltage exceeds the threshold voltage (Vth) the MOSFET turns ON and allows current to flow between the source and drain. It also exhibits a low-resistance between the source and drain, known as “on-state resistance”.The MRF373ALR1 has a gate-to-source voltage of (+2.5V to +10V), which allows it to turn ON and OFF quickly, making it ideal for applications that require fast switching and high-frequency operation. Additionally, its low on-state resistance allows for more efficient power amplification.The MRF373ALR1 is well-suited for power amplifier (PA) applications, such as RF and microwave power amplifiers, linear amplifiers, and audio amplifiers. The MRF373ALR1 is able to amplify high-frequency output signals from these applications, and its low on-state resistance ensures that the amplifier has excellent power efficiency.The MRF373ALR1 is used in a wide range of radio-frequency (RF) and microwave applications, including satellite uplink and downlink communications, cordless phones, cellular base station amplifiers, TV broadcast microwave video links, point-to-point radio systems, radar systems, and more. It is particularly suitable for applications where high efficiency is desired.The MRF373ALR1 is well-suited for use in high-power amplifiers, because of its low gate capacitance (Cgs) and gate-to-drain capacitance (Cds). Its low capacitance allows it to operate at high frequencies and with high switching speed, which contributes to its efficiency and the performance of the amplifier.The MRF373ALR1 also exhibits excellent ruggedness and reliability, and is RoHS-compliant. The device is 100% functionally tested for high power and linear performance before delivery, so that its performance is consistent and reliable.In summary, the MRF373ALR1 is a laterally diffused MOSFET with 20V drain-to-source voltage and 9.76A continuous drain current. It is suitable for a wide range of RF and microwave applications, and is particularly well-suited for power amplifiers, because of its low on-state resistance and low gate and drain capac have excellent power efficiency, ruggedness, and reliability, and are 100% functionally-tested before delivery.

The specific data is subject to PDF, and the above content is for reference