Allicdata Part #: | MRF374A-ND |
Manufacturer Part#: |
MRF374A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 70V 863MHZ NI-650 |
More Detail: | RF Mosfet LDMOS 32V 400mA 857MHz ~ 863MHz 17.3dB 1... |
DataSheet: | MRF374A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 857MHz ~ 863MHz |
Gain: | 17.3dB |
Voltage - Test: | 32V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 400mA |
Power - Output: | 130W |
Voltage - Rated: | 70V |
Package / Case: | NI-650 |
Supplier Device Package: | NI-650 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF374A, also known as a high-power FET radio frequency amplifier, is a widely used RF amplifier in consumer and other various RF applications. It is suitable for both high and medium power applications, depending on the gain and power levels.
MRF374A is a N-Channel RF power MOSFET belongs to the field of transistors and is an important component in radio frequency circuits (RF). It has many advantages over other types of transistors, such as high breakdown voltage, high frequency performance, low input capacitance, and low output resistance.
Application Field
The MRF374A is widely used in consumer and commercial applications such as mobile phones, wireless networks, televisions and microwave ovens. It is also used in more specialised applications such as radar, avionic systems, and other various aerospace, military and industrial systems. The main application of the device is as a power amplifier, which makes it suitable for a variety of uses. It is also used as a driver amplifier in the generation and amplification of radio frequency signals.
Working Principle
The working principle of the MRF374A is based on the transfer of charge between an input and output node. The voltage applied to the gate of the device causes the channel between the drain and the source to be modulated, thus allowing charge to transfer across it. This modulation is achieved by the application of electric fields, and is known as the field effect.
The electric field acts on the device in the same way as if it were a series of metallic gates, with the voltage applied to the gates causing the charge carrier concentration to move through the channel. The carrier concentration is controlled by the gate voltage, and this in turn creates an output current, which is proportional to the input voltage. The output current is also proportional to the transconductance of the device.
In order to maximize the performance of the MRF374A, suitable power supply design is important. It is crucial to note that the device should not be overdriven and that adequate heat sinks should be used to dissipate the heat generated by the device.
The specific data is subject to PDF, and the above content is for reference
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