MRF373ALSR5

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The MRF373ALSR5 is a transistor developed by RFMD. It is an RF high power MOSFET designated with an enhancement-mode depletion-mode N-Channel MOSFET structure. It has a drain-source voltage of 28 Volts and the maximum drain current is 2.2 Amperes. This transistor is available in a 4.7mm x 4.65mm die package.

The MRF373ALSR5 is primarily used in commercial and consumer cellular applications such as cellular base station amplifiers for their high power output and ability to work with low voltage. It is also used in RF power amplifiers, communications equipment and automotive power products, making it an incredibly versatile device.

The operation of the MRF373ALSR5 is based on the operation of an enhancement-mode depletion-mode N-Channel MOSFET. It is capable of controlling the drain-source voltage and raising the output power with very low voltage and minimal power consumption. It is also suitable for applications that require higher voltage swings, withstanding drain-source voltages up to 28V.

The movement of the gate voltage controls the electric field of the channel, which consequently varies the drain-source current. Moving the voltage to a positive increment decreases the electron concentration, thereby restricting the electric field and allowing less current to flow. Conversely, moving the voltage to a negative increment increases the electron concentration, allowing more current to flow. The electric field formed by the voltage controls the electric field of the channel, making it possible for the amplified output power.

The performance of the MRF373ALSR5 can be attributed to its low-capacitance and very high output power resulting from its silicon oxide substrate for maximum breakdown voltage, which allows for large areas of high power coverage. This MOSFET is also capable of delivering various features of high frequency operation, including high speed switching, low-noise amplification, and high-pulsed power operation.

Due to its ability to deliver high power output and achieve low voltage operation, the RFMD MRF373ALSR5 transistor is the ideal selection for a wide variety of applications. Its versatility makes it an excellent choice for consumer and commercial applications, such as cellular base station amplifiers, RF power amplifiers, automotive power products, and communications equipment.

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